SiCN Layer Bonded Semiconductor Structure Leakage Reduction
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Solution Overview
Problem
Hybrid bonding techniques in semiconductor packaging face challenges with leakage and suboptimal bonding results due to the interface between semiconductor wafers, necessitating improved methods for reducing electrical leakage and enhancing bonding efficiency.
Innovation Solution
A bonded semiconductor structure is formed using a first and second substrate with interconnection structures, dielectric layers, and silicon carbon nitride (SiCN) layers, where conductive pads are formed and physically contact each other, with the SiCN layer remaining exposed to enhance bonding and reduce leakage by preventing metal diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hybrid bonding is used to bond semiconductor wafers, then integration density and bandwidth are improved, but electrical leakage occurs at the bonding interface
Solution Approach 1:
A silicon carbon nitride (SiCN) layer is introduced as an intermediary barrier between the conductive pads and dielectric layers at the bonding interface. This SiCN layer prevents metal diffusion into the dielectric material, thereby eliminating the electrical leakage pathway while maintaining the conductive connection between bonded wafers.
Solution Approach 2:
The bonding interface structure uses a composite material system consisting of SiCN layer combined with dielectric layers and conductive pads. The SiCN material provides unique properties that combine electrical isolation with mechanical bonding compatibility, preventing metal diffusion while allowing controlled conductive pathways.
2Ease of manufacture
If conventional bonding procedures are used, then manufacturing process is simple, but bonding results are suboptimal with poor reliability
Solution Approach 1:
The SiCN layer is formed on the conductive pads and dielectric layers before the bonding process. This preliminary formation of the diffusion barrier ensures that when bonding occurs, metal diffusion is already prevented, leading to reliable bonding results without requiring complex post-bonding treatments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach significantly reduces leakage between bonded conductive materials and improves bonding results by utilizing the SiCN layer to prevent metal diffusion, ensuring stronger electrical connections and increased integration density in semiconductor stacks.
Implementation Method 1
the SiCN layer physically contacts the second SiCN layer... leakage of the bonded conductive material which is formed by bonding the first conductive pad and the second conductive pad, is significantly reduced by the SiCN layer
Data Source
AI summary
A bonded semiconductor structure includes a first substrate and a second substrate. The first substrate includes a first interconnection structure, a first dielectric layer, and a first silicon carbon nitride (SiCN) layer sequentially stacked thereon. And at least a first conductive pad is formed in the first dielectric layer and the first SiCN layer. The second substrate includes a second interconnection structure, a second dielectric layer, and a second SiCN layer sequentially stacked thereon. And at least a second conductive pad is formed in the second dielectric layer and the second SiCN layer. The first conductive pad physically contacts the second conductive pad, and the first SiCN layer physically contacts the second SiCN layer.