SiCN Interconnect Insulator Composition to Prevent Peeling and Diffusion
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Solution Overview
Problem
Existing insulators on semiconductor interconnects often peel or crack, leading to undesirable characteristics such as increased capacitance and diffusion of metal atoms.
Innovation Solution
A semiconductor device is developed with a SiCN film as the second insulator, where the content of Si—H groups is 6.0% or less and the content of Si—CH3 groups is 0.5% or less, to improve adhesion and reduce capacitance while preventing metal atom diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulator is formed on the interconnect to prevent metal atom diffusion, then metal atom diffusion is prevented, but the insulator may peel from the contacting interconnect or other insulators causing cracks
Solution Approach 1:
The patent changes the chemical composition parameters of the insulator by controlling the content of Si-H groups to 6.0% or less and Si-CH3 groups to 0.5% or less. This parameter optimization improves the adhesion between the insulator and interconnect while maintaining the diffusion prevention function, thereby resolving the contradiction between reliability and strength.
2Reliability
If a conventional insulator is used on the interconnect, then metal atom diffusion is prevented, but the capacitance increases due to peeling and cracking
Solution Approach 1:
By optimizing the chemical composition parameters (Si-H groups ≤6.0%, Si-CH3 groups ≤0.5%), the patent prevents insulator peeling and cracking. This maintains the integrity of the insulator layer, thereby reducing parasitic capacitance while preserving the metal atom diffusion prevention capability.
3Quantity of substance
If the insulator is formed with conventional composition, then it provides basic insulation, but it shows undesirable characteristics such as peeling and cracking
Solution Approach 1:
The patent applies parameter changes by precisely controlling the chemical composition of the insulator material. By limiting Si-H groups to 6.0% or less and Si-CH3 groups to 0.5% or less, the insulator maintains its structural integrity and prevents peeling and cracking, thereby improving reliability while maintaining proper insulation function.
Data Source
AI summary
In one embodiment, the semiconductor device includes a first insulator including Si (silicon) and O (oxygen). The device further includes a first interconnect provided in the first insulator and including a metal element. The device further includes a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CH3 groups in the second insulator being 0.5% or less. The device further includes a second interconnect provided on the first interconnect in the second insulator and including the metal element.