Interconnect Structure Using SiCN Dielectric to Cut RC Delay
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Solution Overview
Problem
Current interconnection structures in semiconductor integrated circuits face challenges in achieving optimal performance due to limitations in thermal conductivity, mechanical strength, and resistance to etching processes, particularly when using silicon oxycarbide as the interlayer dielectric material, which leads to issues like local heating, increased RC delay, and degradation of electrical properties.
Innovation Solution
The use of silicon carbon nitride as the interlayer dielectric material, combined with a graphene conductive cap feature and a hermetic etch stop layer, enhances thermal conductivity, mechanical strength, and resistance to etching, thereby improving the overall performance of the interconnection structure by reducing RC delay and preventing damage during the packaging process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon oxycarbide is used as the interlayer dielectric material, then the manufacturing process is simpler, but the thermal conductivity is insufficient leading to local heating
Solution Approach 1:
The patent employs a composite interlayer dielectric structure consisting of silicon oxycarbide and silicon carbon nitride layers. The silicon carbon nitride layer is specifically introduced to enhance thermal conductivity and prevent local heating, while the silicon oxycarbide provides the base dielectric function. This composite approach allows the system to achieve both ease of manufacture and improved thermal management.
2Ease of manufacture
If silicon oxycarbide is used as the interlayer dielectric material, then the manufacturing process is simpler, but the mechanical strength is insufficient
Solution Approach 1:
The patent introduces silicon carbon nitride as a composite material layer within the interlayer dielectric structure. This material provides enhanced mechanical strength and hardness to prevent damage during packaging processes, while maintaining compatibility with the existing silicon oxycarbide manufacturing process.
3Ease of manufacture
If silicon oxycarbide is used as the interlayer dielectric material, then the etching process is easier, but the resistance to etching is insufficient leading to degradation of electrical properties
Solution Approach 1:
The patent utilizes a composite dielectric structure where silicon carbon nitride layers are integrated with silicon oxycarbide. The silicon carbon nitride provides superior resistance to etching processes, protecting the underlying silicon oxycarbide layer and preventing degradation of electrical properties such as RC delay, while still allowing for manageable etching processes.
4Temperature
If the interlayer dielectric material has higher thermal conductivity, then local heating is reduced, but the manufacturing complexity increases
Solution Approach 1:
The patent implements a composite interlayer dielectric structure using silicon oxycarbide and silicon carbon nitride that can be deposited using standard semiconductor manufacturing techniques such as PECVD. This approach achieves enhanced thermal conductivity to reduce local heating while maintaining compatibility with existing manufacturing processes, thereby limiting the increase in manufacturing complexity.
Data Source
AI summary
An interconnection structure is provided to include an interlayer dielectric (ILD) layer that is disposed over a substrate, a metal via that is disposed in the ILD layer, and a metal wire that is disposed over the metal via in the ILD layer and that is electrically connected to the metal via. The ILD layer includes silicon carbon nitride.