SiCN Liner Formation for Low-Damage SiO2 Patterning Layers
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Solution Overview
Problem
Conventional substrate processing methods using plasma enhanced atomic layer deposition (PEALD) often result in damage to the underlayer of a substrate, particularly when high RF power is applied, leading to non-uniform SiO2 layer properties and potential device performance issues due to the reactivity of oxygen radicals.
Innovation Solution
A method involving the formation of a liner layer using dual frequency RF power, where low frequency RF power enhances the density and hardness of the liner layer, and high frequency RF power promotes radical generation and uniform film growth, minimizing underlayer damage by simultaneously providing low and high frequency RF power during the formation of a SiCN liner layer, which is then converted into a SiO2 layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high RF power is applied to deposit a high wet etch resistant SiO2 layer, then the wet etch resistance of SiO2 layer is improved, but the photo resist underlayer is significantly damaged
Solution Approach 1:
A liner layer is formed on the photo resist patterned structure before depositing the SiO2 layer. This liner layer acts as a protective barrier that prevents oxygen radicals from damaging the photo resist underlayer during the subsequent SiO2 deposition process with high RF power
Solution Approach 2:
The liner layer serves as an intermediary between the photo resist underlayer and the SiO2 layer, absorbing the harmful effects of oxygen radicals while allowing the SiO2 layer to be deposited with high wet etch resistance
2Object-affected harmful factors
If the thickness of SiCN layer is increased to protect the photo resist underlayer, then the underlayer protection is improved, but the SiO2 layer properties become non-uniform
Solution Approach 1:
The thickness of the liner layer is precisely controlled within a specific range (1-5 nm) to provide adequate protection to the photo resist underlayer while ensuring complete conversion to SiO2 during the deposition process, thereby maintaining uniform SiO2 layer properties
3Object-affected harmful factors
If a thick SiCN layer is used as protective layer, then the underlayer damage is reduced, but the SiO2 layer thickness exceeds the required thin thickness
Solution Approach 1:
The liner layer thickness is optimized to a thin range (1-5 nm) that provides sufficient protection during deposition while being completely converted to SiO2, ensuring the final SiO2 layer meets the required thin thickness specifications for advanced semiconductor devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces underlayer damage to below 5 Å, ensuring uniform wet etch properties and preventing device defects by maintaining the integrity of the photoresist layer and achieving the required thin thickness of the SiO2 patterning layer.
Implementation Method 1
a low frequency RF power and a high frequency RF power are provided simultaneously to the first source layer while the third reactant is provided, and the first source layer is dissociated and converted into a second source layer by the activated third reactant
Implementation Method 2
high frequency RF power promotes radical generation and uniform film growth
Implementation Method 3
forming a compound by reacting the third source layer with the activated second reactant
Data Source
AI summary
Provided is a substrate processing method in which a liner layer is formed on the photo resist underlayer, followed by forming SiO2 patterning layer thereon. According to the embodiment, the liner layer is formed by providing a silicon-containing layer, followed by inert gas activated by providing a high frequency RF power and a low frequency RF power together simultaneously. Thus, a loss of photo resist underlayer may be minimized within the range that does not affect the device performance and the wet etch properties and the width between fine patterns may be kept constant while the thickness of the liner layer is thin.