SiCN Protecting Layer for Semiconductor Spacer Integrity

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Solution Overview

Problem

In semiconductor manufacturing, the removal of disposal spacers during the strained-silicon technique process often damages the first spacer and affects the profile and size of subsequent elements, leading to failed manufacturing processes and reduced device performance.

Innovation Solution

A manufacturing method involving the formation of a carbon-containing layer and a thermal treatment to create a SiCN-based protecting layer between the carbon-containing layer and the first spacer, which acts as an etching stop layer during disposal spacer removal, protecting the first spacer and maintaining its original profile.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the disposal spacer is removed to enable subsequent manufacturing steps, then the manufacturing process can proceed, but the first spacer is consumed and damaged

Engineering Contradiction:

Improvemanufacturing process continuityVSAvoidfirst spacer integrity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

A carbon-containing layer is introduced as an intermediary between the disposal spacer and the first spacer. This carbon layer serves as a protective mediator that prevents direct contact and damage between the disposal spacer removal process and the first spacer, thereby maintaining the integrity of the first spacer while enabling disposal spacer removal.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The carbon-containing layer is formed on the sidewalls of the gate structure before the disposal spacer is formed. This preliminary action ensures that the protective layer is already in place before the disposal spacer is deposited and subsequently removed, preventing damage to the first spacer during the removal process.

Inventive Principle:

Principle #10Preliminary action

2Productivity

If the disposal spacer is removed to define recess positions, then the epitaxial layer formation can proceed, but the profile of the gate structure is damaged

Engineering Contradiction:

Improveepitaxial layer formation capabilityVSAvoidgate structure profile

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The carbon-containing layer acts as a protective intermediary that shields the gate structure profile during the disposal spacer removal process. This mediator prevents etching damage to the gate structure while allowing the disposal spacer to be removed for defining recess positions.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Productivity

If the first spacer is consumed during disposal spacer removal, then the disposal spacer can be removed, but the size and profile of the second spacer and source/drain are adversely impacted

Engineering Contradiction:

Improvedisposal spacer removalVSAvoidsecond spacer and source/drain dimensions

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The carbon-containing layer serves as a protective intermediary that prevents the disposal spacer removal process from consuming the first spacer. By maintaining the first spacer's integrity, the dimensions and profiles of subsequently formed second spacers and source/drain structures are preserved.

Inventive Principle:

Principle #24Intermediary (Mediator)

4Productivity

If the disposal spacer is removed without protection, then the manufacturing process can continue, but the yield is reduced due to process failures

Engineering Contradiction:

Improvemanufacturing process continuityVSAvoidmanufacturing yield

Core Design Contradiction:

ProductivityVSEase of manufacture

Solution Approach 1:

The carbon-containing layer is formed in advance before the disposal spacer is deposited and removed. This preliminary protective action ensures that when the disposal spacer is removed, the first spacer and gate structure are already protected, preventing process failures and improving manufacturing yield.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The carbon-containing layer provides beforehand cushioning protection to the first spacer and gate structure against potential damage during the disposal spacer removal process. This prior protective measure cushions against etching attacks and physical damage, ensuring process success and high yield.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The SiCN-based protecting layer ensures the first spacer remains unimpaired, allowing subsequent steps to form successful second spacers and source/drain elements, enhancing yield and reliability without increasing process complexity.

Implementation Method 1

performing a thermal treatment to form a protecting layer between the carbon-containing layer and the first spacer

Methodology Applied

Scientific EffectThermal treatment: Heat Treatment

Implementation Method 2

form a SiCN-based protecting layer between the carbon-containing layer and the first spacer

Methodology Applied

Scientific EffectChemical reaction forming SiCN layer: Chemical Bonding

Data Source

PatentUS9269811B2Spacer scheme for semiconductor device

Publication Date: 2016.02.23 UNITED MICROELECTRONICS CORP

AI summary

A manufacturing method for a semiconductor device includes providing a substrate having at least agate structure formed thereon and a first spacer formed on sidewalls of the gate structure, performing an ion implantation to implant dopants into the substrate, forming a disposal spacer having at least a carbon-containing layer on the sidewalls of the gate structure, the carbon-containing layer contacting the first spacer, and performing a thermal treatment to form a protecting layer between the carbon-containing layer and the first spacer.