SiCN-SiN Laminate Film Deposition for Low-Temperature Stress Control
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Solution Overview
Problem
Existing film forming techniques lack the ability to effectively control film stress and properties, particularly in the formation of laminate films on substrates.
Innovation Solution
A method involving the sequential deposition of SiCN and SiN layers on a substrate using specific silicon raw materials and nitriding agents, with controlled repetition to adjust the ratio of these layers, allowing for precise control over film properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single-layer film is formed using conventional techniques, then the film forming process is simple, but the film stress and properties cannot be effectively controlled
Solution Approach 1:
The film is divided into multiple layers (SiCN layer and SiN layer) with different compositions and properties. Each layer contributes differently to the overall film characteristics, allowing independent control of stress and other properties through layer thickness ratios and formation conditions.
Solution Approach 2:
The patent uses composite film structure combining SiCN and SiN layers. By controlling the ratio of these different materials and their respective formation conditions, the overall film stress and properties can be precisely tuned while maintaining structural integrity.
2Manufacturing precision
If high temperature processing is used to form films, then film density and quality improve, but productivity decreases due to longer processing time
Solution Approach 1:
The patent optimizes formation temperature, pressure, and gas flow rate parameters to achieve high-quality film formation at lower temperatures. By carefully controlling these parameters during sequential layer formation, film density and quality are maintained while reducing processing time and improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of laminate films with controlled film stress and density at low temperatures, enhancing productivity and film quality.
Implementation Method 1
forming a SiCN layer on a substrate using a first silicon raw material and a first nitriding agent; forming a SiN layer on the SiCN layer using a second silicon raw material and a second nitriding agent
Data Source
AI summary
To provide a technique capable of controlling film properties, a film forming method according to one embodiment of the present disclosure includes: forming a SiCN layer on a substrate using a first silicon raw material and a first nitriding agent; forming a SiN layer on the SiCN layer using a second silicon raw material and a second nitriding agent; and forming a laminate film in which the SiCN layer and the SiN layer are laminated, by repeating the forming of the SiCN layer and the forming of the SiN layer. The first silicon raw material contains a Si—C—Si bond.