Side-Flow Gas Inlet for Substrate Processing Efficiency

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Solution Overview

Problem

Conventional substrate processing apparatuses have poor wafer processing efficiency due to inefficient gas flow, as most processing gas passes through the periphery of wafers rather than between them, and existing multi-system nozzle configurations do not adequately address this issue.

Innovation Solution

A substrate processing apparatus with a reaction tube and a surrounding heating apparatus where the gas inlet tube is positioned on the side surface, allowing for side-flow gas distribution, and featuring a heat insulator with a groove-shaped inlet opening to avoid interference and enhance heat retention, along with multiple heating elements for uniform heating and efficient gas preheating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the gas inlet tube is positioned at the lower end standing erect, then the heating apparatus can be disposed around the reaction tube, but the gas flow passes through the periphery of wafers rather than between them, reducing processing efficiency

Engineering Contradiction:
Improvesubstrate processing efficiencyVSAvoidgas flow distribution
Core Design Contradiction:
ProductivityVSEase of operation

Solution Approach 1:

The gas inlet tube is repositioned from a vertical orientation at the lower end to a horizontal orientation on the side surface of the reaction tube. This dimensional change in gas inlet positioning enables the gas flow to move from passing through the periphery to flowing directly between the wafers, thereby improving substrate processing efficiency.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Temperature

If the heating apparatus surrounds the reaction tube, then uniform heating can be achieved, but the heat insulator interferes with the gas inlet tube positioning on the side surface

Engineering Contradiction:
Improveheating uniformityVSAvoidheating apparatus structure
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The heat insulator is segmented by forming a groove-shaped inlet opening that accommodates the gas inlet tube. This segmentation allows the heat insulator to maintain its thermal insulation function while creating a dedicated pathway for the gas inlet tube on the side surface, resolving the interference between the heating apparatus and gas inlet positioning.

Inventive Principle:
Principle #1Segmentation

3Productivity

If the gas inlet tube is repositioned to the side surface for side-flow, then gas flows between wafers improving processing efficiency, but the heating apparatus structure becomes more complex

Engineering Contradiction:
Improvesubstrate processing efficiencyVSAvoidheating apparatus structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The groove-shaped inlet opening in the heat insulator serves dual functions: it maintains thermal insulation while accommodating the gas inlet tube positioning. This merging of functions reduces the need for additional separate components, thereby minimizing structural complexity while enabling side-flow gas distribution for improved substrate processing efficiency.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves substrate processing efficiency by ensuring gas flows directly over the wafers, reduces heat loss, and facilitates uniform heating, thereby enhancing the processing efficiency and preventing cold spots.

Implementation Method 1

a heating element disposed between the heat insulator and the reaction tube

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a heating element disposed between the heat insulator and the reaction tube

Methodology Applied
Scientific EffectThermal radiation: Thermal Radiation

Implementation Method 3

a heat insulator that surrounds the reaction tube

Methodology Applied
Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 4

the gas flow supplied from the gas inlet tube into the reaction tube is a side flow

Methodology Applied
Scientific EffectGas flow: Convection

Data Source

PatentUS7700054B2Substrate processing apparatus having gas side flow via gas inlet
Publication Date: 2010.04.20 KOKUSAI DENKI KK
  • US7700054B2 patent drawing
  • US7700054B2 patent drawing
  • US7700054B2 patent drawing

AI summary

An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.