Side Gas Injection Assembly for Uniform Oxide Growth at Wafer Edges
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Solution Overview
Problem
Current semiconductor processing chambers have limited growth control due to poor gas flow distribution, resulting in non-uniform oxide layer growth across the substrate, with excessive growth at the center and insufficient growth at the edges.
Innovation Solution
The introduction of a side injection assembly with an elongated structure and adjustable inject angle, which directs a tangential gas flow towards the substrate edges, improving gas distribution and reaction uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gas is delivered through the inlet at high velocity to meet low processing chamber pressure requirements, then gas flow rate is improved, but gas heating adequacy at the substrate edge deteriorates
Solution Approach 1:
The gas delivery system is segmented into two separate injection paths: a central inlet for bulk gas flow and side injection ports positioned near the substrate edge. This segmentation allows independent optimization of gas flow rate and local gas heating conditions, resolving the contradiction between high productivity and manufacturing precision.
Solution Approach 2:
Different regions of the substrate receive gas with different properties: the center receives high-velocity gas from the inlet, while the edge receives gas from side injection ports that is adequately heated. This local quality approach ensures that each region receives the appropriate gas conditions for uniform oxide layer growth, improving thickness uniformity without sacrificing overall productivity.
2Power
If oxygen radicals are generated from combustion at the substrate edge, then reaction rate is improved, but oxygen radical life cycle deteriorates due to quick recombination
Solution Approach 1:
Gas is injected from the side ports before reaching the substrate edge, allowing preliminary heating and controlled radical generation. This preliminary action ensures that oxygen radicals are generated at the optimal location and timing, extending their life cycle by preventing premature recombination while maintaining high reaction rates where needed.
3Manufacturing precision
If gas flow is directed tangentially towards substrate edges, then edge gas distribution is improved, but device complexity increases due to side injection assembly
Solution Approach 1:
The side injection assembly is designed to serve multiple functions: it delivers gas to the substrate edge, controls gas flow direction through adjustable injectors, and enables tangential flow patterns for improved edge distribution. By consolidating these functions into a single assembly, the patent achieves improved processing uniformity without excessive complexity increase.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances oxide layer thickness uniformity and density across the substrate, particularly at the edges, by controlling the gas flow and reaction rate, thereby improving processing uniformity.
Implementation Method 1
A second gas flow is provided from a side injection assembly coupled to a base ring of the chamber body in a direction that is tangential to an edge of the substrate
Implementation Method 2
A heat source is positioned to provide thermal energy to the processing volume
Implementation Method 3
The processing volume is pumped using an exhaust assembly coupled to the outlet
Implementation Method 4
The oxygen radicals strike the surface of the substrate to form a layer, for example a silicon dioxide layer, on a silicon substrate
Implementation Method 5
a first side inject actuator coupled to the elongated structure and configured to control a first inject angle of the elongated structure relative to the base ring
Data Source
AI summary
The present disclosure provides an apparatus and methods for processing a substrate. The apparatus includes a chamber body defining a processing volume. The apparatus further includes a base ring and a substrate support disposed in the processing volume. A gas source assembly is in fluid communication with an inlet of the chamber body. An exhaust assembly is in fluid communication with an outlet of the chamber body. A side injection assembly is in fluid communication with a first gas source, in which the side injection assembly is coupled to the base ring of the chamber body. The side injection assembly includes an elongated structure that extends towards the processing volume and a first side inject actuator coupled to the elongated structure and configured to control a first inject angle of the elongated structure relative to the base ring