Side Gate Electrode for 2D Material Channel Energy Barrier Control
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Solution Overview
Problem
Graphene-based electronic devices require higher voltages to change the Fermi level, limiting the change in the energy barrier and resulting in a high sub-threshold swing, which affects their performance and efficiency.
Innovation Solution
An electronic device design incorporating a side gate electrode that faces a side surface of the energy barrier forming layer, allowing for a lower operation voltage and reduced sub-threshold swing by directly affecting the energy barrier through a field effect, along with a 2D material channel and specific layer configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a conventional gate electrode structure is used with graphene channel, then the device can operate, but a high voltage is required to change the Fermi level of graphene, resulting in limited energy barrier control and high sub-threshold swing
Solution Approach 1:
The patent introduces a side gate electrode that applies electric field from the side dimension rather than only from the top. This side gate structure enables direct modulation of the energy barrier at the graphene-semiconductor interface by applying voltage to the side gate, which creates an electric field perpendicular to the interface. This dimensional change in gate control allows for effective energy barrier modulation at low voltages, reducing both the operation voltage requirement and the sub-threshold swing compared to conventional top-gate structures
Solution Approach 2:
The patent employs an energy barrier forming layer with specific material composition and thickness designed to create a localized energy barrier at the graphene-semiconductor interface. This layer is positioned precisely where needed to modulate carrier injection, and its properties (material type, thickness, doping) are optimized locally to achieve effective energy barrier control. The side gate electrode is also positioned to apply electric field locally at the critical interface region, enabling precise local control of the energy barrier without requiring high global voltages
2Adaptability or versatility
If the Fermi level of graphene is changed by applying voltage to the gate electrode, then the energy barrier can be modulated, but a larger voltage is required when the Fermi level is far from the inherent Fermi level, limiting the change range to approximately ±0.4 eV without damaging the gate insulating layer
Solution Approach 1:
The side gate electrode provides an additional dimension for voltage application that directly modulates the energy barrier at the interface. By applying voltage to the side gate, the electric field is created perpendicular to the graphene-semiconductor interface, enabling direct control of carrier injection and energy barrier height. This allows for large Fermi level changes (exceeding the ±0.4 eV limitation of conventional top gates) while using lower voltages, because the side gate's electric field acts directly at the critical interface region rather than requiring high voltage across a thick gate insulator
Solution Approach 2:
The energy barrier forming layer acts as an intermediary between the graphene channel and the semiconductor substrate. This layer is specifically designed to facilitate controlled carrier injection and to be modulated by the side gate's electric field. The side gate's electric field penetrates through this intermediary layer to directly affect the energy barrier, enabling efficient Fermi level modulation without requiring high voltages that would damage conventional gate insulating layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves high mobility and low operation voltage with improved sub-threshold swing performance, enhancing the efficiency and control of the electronic device.
Implementation Method 1
the gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer
Data Source
AI summary
Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.