Side Inject Nozzle Design for Thermal Processing Uniformity
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Solution Overview
Problem
Current semiconductor processing chambers experience poor growth uniformity due to high gas velocity and short oxygen radical life cycles, leading to inadequate heating at the substrate edges and uneven oxide layer formation.
Innovation Solution
The implementation of a side gas assembly with a tangentially directed gas inlet and an exhaust assembly, angularly offset from the main gas inlet and outlet, to provide controlled gas flow and extend the processing volume, ensuring uniform gas distribution across the substrate, including the edges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gas is delivered to the substrate at high velocity to meet low processing chamber pressure requirements, then gas delivery efficiency is improved, but gas impingement on the substrate occurs and prevents adequate heating at the substrate edges
Solution Approach 1:
The gas delivery system is segmented into multiple injection points: a central gas inlet for bulk gas delivery and side gas inlets positioned near the substrate edge for targeted edge region gas supply. This segmentation allows different gas flows to serve different functional zones, resolving the conflict between overall delivery efficiency and localized heating requirements.
Solution Approach 2:
Different gas flow characteristics are applied to different regions of the substrate. The central inlet provides high-velocity gas for efficient bulk delivery, while side inlets provide lower-velocity gas specifically to the edge region, ensuring adequate heating and reaction time at the edges without compromising overall productivity.
2Power
If oxygen radicals are generated from combustion at high velocity, then reaction rate is improved, but oxygen radicals quickly recombine creating a short life cycle that limits growth control
Solution Approach 1:
Gas is introduced at the side inlets before reaching the substrate edge, allowing oxygen radicals to be generated in advance in the gas phase. This preliminary action extends the radical life cycle by creating radicals closer to their target location, reducing the distance they must travel and the time they are exposed to recombination conditions.
Solution Approach 2:
The side gas inlets act as intermediary zones where oxygen radicals are generated and conditioned before reaching the substrate. This intermediary region allows for controlled radical formation and extended residence time, mediating between the high-power combustion source and the substrate surface to improve both reaction rate and radical utilization.
3Quantity of substance
If gas flow is directed centrally to the substrate, then main substrate area coverage is improved, but edge region gas distribution is insufficient resulting in poor growth at the edges
Solution Approach 1:
The gas distribution system is divided into central and side injection zones. The central inlet maintains adequate coverage for the main substrate area, while additional side inlets are specifically positioned to target the edge region, ensuring both center coverage and edge uniformity through segmented gas delivery.
Solution Approach 2:
Gas flow characteristics are localized to match substrate region requirements. The central inlet provides sufficient gas quantity for the main area, while side inlets deliver targeted gas flow specifically to the edge region, creating locally optimized conditions that result in uniform film growth across the entire substrate surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances growth uniformity by slowing down gas velocity and extending the oxygen radical life cycle, resulting in improved oxide layer thickness and uniformity across the substrate from center to edge.
Implementation Method 1
the side gas assembly comprises a gas inlet pointed in a direction that is tangential to the edge of the substrate supporting surface
Implementation Method 2
the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are angularly offset at about 90° with respect to each other
Implementation Method 3
growing an oxide layer on an upper surface of the substrate within a processing chamber... while heating the substrate with a radiant heat source
Implementation Method 4
The oxygen radicals strike the surface of the substrate to form a layer, for example a silicon dioxide layer, on a silicon substrate
Implementation Method 5
The oxide layer may be deposited by exposing the substrate to oxygen and hydrogen gases
Data Source
AI summary
Implementations of the present disclosure provide apparatus and method for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support has a substrate supporting surface, a gas source assembly coupled to an inlet of the chamber body, an exhaust assembly coupled to an outlet of the chamber body, and a side gas assembly coupled to a sidewall of the chamber body, wherein the side gas assembly comprises a gas inlet pointed in a direction that is tangential to the edge of the substrate supporting surface, and wherein the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are angularly offset at about 90° with respect to each other, and the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are intersected by a common plane.