Side-Intake Gas Spouting Port for Semiconductor Wafer Uniformity
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Solution Overview
Problem
Conventional vertical-type semiconductor manufacturing apparatuses face issues with in-plane and interwafer film thickness uniformity due to non-uniform gas flow, leading to variations in film thickness across wafers and necessitating frequent maintenance and replacement of gas supply pipes.
Innovation Solution
A substrate processing apparatus with a gas inlet tube and gas exhaust tube positioned on the side of the reaction tube, featuring slit-shaped gas spouting ports that straddle multiple wafers to ensure uniform gas flow and reduce maintenance needs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas nozzles are provided in the wafer processing space to extend the introduction inlet, then gas flow can reach the wafers, but the gas supply pipes require frequent maintenance and replacement due to non-uniform gas flow
Solution Approach 1:
The patent inverts the conventional gas flow direction by introducing gas from the side of the reaction tube rather than from below. The gas introduction inlet is positioned at the side of the reaction tube, and gas flows horizontally across the wafer processing space, which eliminates the need for gas nozzles inside the processing space and reduces maintenance requirements while improving film thickness uniformity.
Solution Approach 2:
The patent changes the gas flow dimension from vertical (bottom to top) to horizontal (side to side). By positioning the gas introduction inlet at the side of the reaction tube and having gas flow horizontally across the wafer processing space, the system achieves more uniform gas distribution without requiring complex nozzle arrangements, thereby reducing maintenance needs.
2Device complexity
If conventional gas introduction methods are used, then the apparatus structure is simple, but in-plane and interwafer film thickness uniformity deteriorates due to non-uniform gas flow
Solution Approach 1:
The patent inverts the conventional gas flow direction by introducing gas from the side of the reaction tube rather than from below. This simple structural change achieves uniform gas flow across all wafers, improving film thickness uniformity without complicating the apparatus structure.
Solution Approach 2:
The side gas introduction inlet serves multiple functions: it introduces process gas, creates uniform horizontal flow across the wafer processing space, and eliminates the need for separate gas nozzles for each wafer position. This multi-functional design improves film thickness uniformity while maintaining structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves wafer in-plane and interwafer film thickness uniformity by maintaining consistent gas flow velocity and density across wafers, reducing the frequency of pipe maintenance and allowing for flexible film formation conditions without pipe alterations.
Implementation Method 1
a heater 1 is provided to surround the outer circumference of the reaction tube 2, the interior of the reaction tube 2 being able to be thermally processed thereby to a predetermined temperature
Implementation Method 2
a gas spouting port being disposed in this abovementioned gas inlet tube in a slit form so as to straddle at least a plurality of the substrates in a direction perpendicular to the abovementioned substrate processing surface, for spouting gas from the gas inlet tube into the abovementioned processing chamber
Implementation Method 3
in a process for manufacturing a semiconductor device, a thermochemical reaction is utilized to administer a desired processing such as the fabrication of an oxide film or metal film on a substrate
Data Source
AI summary
A method of manufacturing a semiconductor device includes the steps of: conveying a plurality of substrates disposed in a direction perpendicular to a substrate processing surface into a processing chamber provided inside of a reaction tube, with an outer periphery surrounded by a heating device; and processing the substrates by introducing gas to a gas inlet tube provided on a side face of the reaction tube in a region for processing the substrates inside the reaction tube, so as to reach at least an outside of the heating device, and spouting the gas into the processing chamber from a slit-shaped gas spouting port disposed in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface.