Side Interconnects for LED Thermal Management
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Solution Overview
Problem
Conventional semiconductor light-emitting devices with interconnects disposed beneath the semiconductor structure face limitations in thermal conductivity and reliability due to insulating materials used to fill gaps, leading to hot spots and potential device failure.
Innovation Solution
The interconnects are positioned adjacent to or on the side of the semiconductor structure instead of beneath it, enhancing thermal conductivity and reducing mechanical stress by eliminating gaps filled with insulating materials, and using reflective metals to improve light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If interconnects are disposed beneath the semiconductor structure, then electrical connection is achieved, but thermal conductivity deteriorates due to insulating materials filling gaps
Solution Approach 1:
The interconnect structure transitions from a planar arrangement beneath the semiconductor to a three-dimensional configuration where interconnects are positioned on the sides and corners of the semiconductor structure, enabling thermal conduction pathways in multiple spatial dimensions simultaneously
Solution Approach 2:
The invention employs composite interconnect structures combining highly thermally conductive materials (such as copper, aluminum, or diamond-like carbon) with electrically conductive properties, creating a dual-function material system that simultaneously addresses thermal management and electrical connection requirements
2Reliability
If gaps are filled with insulating materials to electrically isolate interconnects, then electrical isolation is achieved, but thermal spreading deteriorates
Solution Approach 1:
The invention introduces dielectric layers with enhanced thermal conductivity as intermediary materials between adjacent interconnects, serving as thermal bridges that facilitate heat transfer while maintaining electrical isolation through their inherent insulating properties
Solution Approach 2:
The interconnect structure is designed to simultaneously perform multiple functions: electrical conduction, thermal conduction, and mechanical support, eliminating the need for separate insulating materials that would compromise thermal performance
3Ease of manufacture
If interconnects are positioned beneath the semiconductor structure, then manufacturing is simplified, but mechanical stress increases leading to cracking
Solution Approach 1:
The interconnect structure is segmented into multiple independent conductive elements positioned at different locations (sides and corners) rather than a single continuous layer beneath the semiconductor, distributing mechanical stress across discrete points and reducing the risk of catastrophic failure
Solution Approach 2:
The side-positioned interconnects are designed with increased surface area and strategic placement to preemptively absorb and distribute thermo-mechanical stresses before they can propagate through the semiconductor structure and cause cracking
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances thermal spreading, reduces hot spots, improves light extraction, and increases the reliability of the semiconductor light-emitting devices by minimizing thermo-mechanical induced cracking and other reliability issues.
Implementation Method 1
enhancing thermal conductivity and reducing mechanical stress by eliminating gaps filled with insulating materials
Implementation Method 2
using reflective metals to improve light extraction
Data Source
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AI summary
Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n- contact is connected to the n-type region. A metal p-contact is in direct contact with the p- type region. An interconnect is electrically connected to one of the n-contact and the p- contact. The interconnect is disposed adjacent to the semiconductor structure.