Side-View Light Emitting Device with Interconnect Layers
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Solution Overview
Problem
There is a need for downsized and cost-effective semiconductor light emitting devices suitable for mass production, particularly in applications such as illumination and liquid crystal display backlight sources, where existing technologies face challenges in reducing size and production costs while maintaining performance.
Innovation Solution
A light emitting device design featuring a semiconductor layer with a p-side and n-side electrode configuration, interconnect layers, and insulating layers that allow for efficient light emission and heat dissipation, along with a manufacturing method that integrates a resin layer for mechanical reinforcement and reduced substrate dependency, enabling a side-view type configuration for improved light distribution and reduced thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a conventional top-view light emitting device structure is used, then the device can be manufactured with existing processes, but the device size cannot be sufficiently reduced and production costs remain high
Solution Approach 1:
The patent inverts the conventional light emitting device structure by making the light emitting surface face downward instead of upward. The semiconductor layer is configured with the light emitting layer at the lower surface, allowing light to emit toward the mounting substrate rather than away from it. This inversion enables compact integration while maintaining manufacturability through adapted existing processes.
Solution Approach 2:
The patent transitions from a planar top-view configuration to a vertical side-view configuration where the light emitting surface is oriented perpendicular to the mounting substrate. This dimensional change allows the device to achieve reduced footprint area while maintaining light emission efficiency, effectively moving the light emission function to a different spatial orientation.
2Length of stationary object
If the semiconductor layer is thinned to reduce device thickness, then the device can be integrated into thinner systems, but mechanical strength and structural stability deteriorate
Solution Approach 1:
The patent employs a composite structure combining the thinned semiconductor layer with a resin layer and interconnect layers. The resin layer provides mechanical reinforcement and stress distribution, while the interconnect layers with conductive fillers add structural support. This composite approach enables the semiconductor layer to be sufficiently thin for compact integration while maintaining overall mechanical strength through the supporting matrix materials.
Solution Approach 2:
The resin layer acts as an intermediary between the thinned semiconductor layer and the mounting substrate, providing mechanical support and stress relief. This intermediary layer allows the semiconductor layer to maintain reduced thickness without compromising structural integrity, as the resin layer absorbs mechanical stresses that would otherwise affect the thin semiconductor structure.
3Reliability
If interconnect layers are made thicker to improve electrical connection, then electrical conductivity improves, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges multiple functions into the interconnect layers: electrical conduction, mechanical reinforcement, and structural support. By combining copper particles with the resin matrix in the interconnect layers, the structure achieves reliable electrical connections between the semiconductor layer and external circuits while simultaneously providing mechanical strength. This merging reduces the need for separate thick metal interconnect structures, simplifying the overall device architecture.
Solution Approach 2:
The interconnect layers utilize composite materials combining conductive particles (copper) with a resin matrix. This composite approach provides sufficient electrical conductivity through the distributed conductive particles while maintaining a relatively thin profile. The resin matrix provides structural integrity, eliminating the need for thick solid metal interconnects and reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a compact, cost-effective light emitting device with enhanced mechanical strength and efficient light output, suitable for mass production and integration into thinner illumination systems, such as liquid crystal display backlights.
Implementation Method 1
a light emitting layer (an active layer) 13... capable of emitting visible light or white light
Data Source
Figure 1A~1C
Figure 2
Figure 3A~3B
AI summary
According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer (18), a p-side interconnect layer, an n-side interconnect layer and a second insulating layer (25). The semiconductor layer includes a first surface (15a), a second surface opposite to the first surface, and a light emitting layer. The p-side electrode (16) is provided on the second surface in a region including the light emitting layer. The n-side electrode (17) is provided on the second surface in a region not including the light emitting layer. The p-side interconnect layer includes a p-side external terminal (23a) exposed from the second insulating layer (25) at a third surface (30) having a plane orientation different from a plane orientation of the first surface and a plane orientation of the second surface. The n-side interconnect layer includes an n-side external terminal (24a) exposed from the second insulating layer (25) at the third surface (30).