Selective Silicon Oxide Sidewall Deposition
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Solution Overview
Problem
Current semiconductor manufacturing methods for increasing feature resolution in integrated circuits are cost-inefficient and complex, particularly due to the need for multiple deposition and etch steps in pattern multiplication processes.
Innovation Solution
The method involves selectively depositing silicon oxide layers on dielectric surfaces using silylation and plasma treatments, maintaining reactive groups on sidewall surfaces while avoiding deposition on metal surfaces, allowing for precise control of feature size and thickness through multiple silylation cycles and plasma exposures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If pattern multiplication processes (SADP, SAQP) are used to increase resolution, then the resulting resolution is improved, but the process complexity and manufacturing cost increase significantly
Solution Approach 1:
The dielectric material performs self-service by naturally forming sidewall structures that guide the selective deposition process. The catalyst spontaneously forms on exposed surfaces and is automatically deactivated on horizontal surfaces due to plasma geometry, eliminating the need for complex external control mechanisms
Solution Approach 2:
The invention applies local quality by creating spatially varying catalyst activity - the catalyst is present and active on sidewall surfaces but deactivated on horizontal surfaces. This local differentiation enables selective deposition only on sidewalls, achieving pattern multiplication without complex process steps
2Manufacturing precision
If multiple deposition and etch steps are used for pattern multiplication, then feature resolution is improved, but the manufacturing cost and integration complexity increase
Solution Approach 1:
The invention merges multiple functions into a single deposition step - pattern multiplication, sidewall formation, and material deposition are achieved simultaneously through selective sidewall deposition, eliminating the need for separate deposition and etch steps required by conventional SADP and SAQP
Solution Approach 2:
The invention replaces complex mechanical process sequences (multiple deposition and etch steps) with a chemically-driven selective deposition process. The plasma-catalyst chemistry automatically directs deposition to sidewalls only, substituting chemical selectivity for mechanical process complexity
3Quantity of substance
If feature sizes are reduced to increase density, then the element density is improved, but the patterning process resolution requirements become more difficult to meet
Solution Approach 1:
The invention transitions from planar patterning to three-dimensional sidewall-based patterning. By forming patterns on vertical sidewalls rather than horizontal surfaces, the process achieves higher effective resolution and density without being constrained by lithographic wavelength limitations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables reproducible and selective deposition of thin silicon oxide films, facilitating the miniaturization of IC devices by allowing for precise control of feature sizes and reducing integration complexity and costs.
Implementation Method 1
delivering a catalyst deactivator to the substrate, the catalyst deactivator being activated by a plasma
Implementation Method 2
the substrate being biased such that the catalyst deactivator is received by the exposed first surface and the exposed second surface
Implementation Method 3
delivering a silanol to the substrate, the silanol depositing a silicon-containing layer on the one or more sidewall surfaces
Data Source
AI summary
Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.