Sidewall Recessed Semiconductor Die for Epoxy Fillet Control
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Solution Overview
Problem
Existing semiconductor device manufacturing processes face challenges in preventing epoxy from flowing onto the top surface of the die during the die attach process, especially as die thicknesses become thinner.
Innovation Solution
The implementation of a semiconductor device design that includes a sidewall with an overhang and a recess, where the overhang's thickness is less than the device's thickness and configured to prevent epoxy from reaching the top surface. The recess is designed to allow epoxy to fill it, thereby preventing excess epoxy from flowing onto the top surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If die thickness is reduced to enable thinner semiconductor devices, then device miniaturization is achieved, but epoxy flows onto the top surface of the die during die attach
Solution Approach 1:
The sidewall is segmented into distinct regions: an upper portion that extends further laterally to form an overhang, and a lower portion that is recessed. This segmentation creates a physical barrier that segments the epoxy flow path, preventing epoxy from reaching the top surface while maintaining die thickness reduction
Solution Approach 2:
The solution transitions from a purely vertical dimension (die thickness) to include a lateral dimension feature (sidewall overhang). The overhang creates a three-dimensional structure that uses lateral extension to block vertical epoxy flow, effectively adding a spatial dimension to control the harmful epoxy flow
2Manufacturing precision
If epoxy fillet height is严格控制 to maintain reliable die attach, then manufacturing quality is improved, but excess epoxy must be prevented from flowing onto the top surface
Solution Approach 1:
The recessed lower sidewall acts as an intermediary structure between the epoxy and the top surface. It provides a designated zone where excess epoxy can be contained, serving as a mediator that intercepts and holds the harmful epoxy flow before it can reach critical areas
Solution Approach 2:
The sidewall geometry parameters are changed from a uniform vertical profile to a stepped profile with specific overhang and recess dimensions. This parameter change creates a physical constraint that automatically limits epoxy fillet height and prevents excess epoxy from flowing onto the top surface
Data Source
AI summary
Implementations of a semiconductor device may include a first surface having a first perimeter; and a second surface opposite the first surface, the second surface having a second perimeter, the first perimeter being greater than the second perimeter. The semiconductor device may include a sidewall extending between the first surface and the second surface, the sidewall defining an overhang where a width of the overhang extends between the first perimeter and the second perimeter, and a thickness of the overhang is less than a thickness of the semiconductor device. The overhang may be configured to keep epoxy away from the first side.