Selective Sidewall Graphene Deposition in Substrate Processing
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Solution Overview
Problem
Existing substrate processing methods face challenges in forming a graphene film selectively on the sidewalls of metal-containing layers in semiconductor wiring, leading to potential short-circuiting and non-uniform resistance due to graphene film formation on both sidewalls and bottoms of holes or grooves.
Innovation Solution
A substrate processing apparatus and method involving a microwave plasma generation system that selectively forms a graphene film on the sidewalls of metal-containing layers by modifying the metal-containing layer with a modifying gas and using a carbon-containing gas to generate plasma, ensuring selective formation on the sidewalls while avoiding the bottom.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a graphene film is formed on both sidewalls and bottoms of holes or grooves, then coverage is improved, but short-circuiting occurs and resistance uniformity deteriorates
Solution Approach 1:
The patent applies local quality by modifying only the sidewalls of holes or grooves to have graphene-forming properties while leaving other areas unchanged. This is achieved through selective surface treatment or deposition processes that create different surface characteristics on sidewalls versus bottoms, enabling spatially selective graphene film formation. The modifying gas treatment or plasma processing creates localized surface modifications that promote graphene formation only on sidewalls.
Solution Approach 2:
The patent segments the hole or groove structure into distinct regions (sidewall vs. bottom) with different surface properties. By applying different treatments to different segments, the process achieves selective graphene formation on sidewalls while preventing formation on bottoms, thus avoiding short-circuits while maintaining controlled coverage.
2Manufacturing precision
If a modifying gas is supplied to selectively modify the metal-containing layer, then selectivity is improved, but process complexity increases
Solution Approach 1:
The patent utilizes parameter changes by varying gas composition, flow rates, pressure, or temperature during the modifying gas supply process. These parameter adjustments enable selective modification of the metal-containing layer without requiring additional processing equipment or complex multi-step procedures. The plasma parameters are optimized to achieve selective surface modification.
Solution Approach 2:
The modifying gas acts as an intermediary substance that mediates between the plasma source and the metal-containing layer. This intermediary enables selective surface modification through chemical reactions or physical interactions, achieving precise control over which areas are modified without direct mechanical intervention or complex masking processes.
3Manufacturing precision
If plasma is generated using carbon-containing gas, then graphene film formation is enabled, but contamination risk increases
Solution Approach 1:
The patent employs an inert or controlled atmosphere during plasma generation to prevent unwanted contamination. By maintaining appropriate pressure conditions and using purified carbon-containing gases, the process minimizes introduction of impurities while enabling controlled graphene film formation on the modified metal-containing layer.
Solution Approach 2:
The patent replaces mechanical contact-based deposition methods with plasma-based deposition. This substitution eliminates contamination risks associated with physical contact, particulate generation, and mechanical handling, while enabling precise control over graphene film formation through plasma parameter optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves selective graphene film formation on metal-containing layers, reducing resistance and preventing short-circuits, while maintaining insulation and improving in-plane uniformity of the graphene film.
Implementation Method 1
supplying a modifying gas into a processing container and selectively modifying the metal-containing layer at a sidewall of a hole or groove in the pattern
Implementation Method 2
supplying a processing gas including a carbon-containing gas into the processing container to generate plasma, and forming a graphene film selectively on the metal-containing layer at the sidewall using the generated plasma
Data Source
AI summary
A substrate processing method includes: preparing a substrate having a pattern, which includes a metal-containing layer formed on a base layer and a dielectric layer formed on the metal-containing layer; supplying a modifying gas into a processing container and selectively modifying the metal-containing layer at a sidewall of a hole or groove in the pattern; and supplying a processing gas including a carbon-containing gas into the processing container to generate plasma, and forming a graphene film selectively on the metal-containing layer at the sidewall by using the generated plasma.