Sidewall Interconnection Structure With Heat Dissipation Conduit
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Solution Overview
Problem
The miniaturization of semiconductor apparatuses makes it challenging to manufacture high-density interconnection structures laterally, and heat dissipation becomes a significant issue in high-density devices, necessitating innovative solutions for both interconnection and thermal management.
Innovation Solution
A semiconductor apparatus with a sidewall interconnection structure that includes an electrical isolation layer, a conductive structure for lateral electrical connections, and a heat dissipation conduit embedded within the isolation layer to efficiently manage heat dissipation, allowing for flexible interconnections between stacked devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the lateral dimension is reduced to increase integration density, then the integration level increases, but the manufacturing difficulty of high-density interconnection structures increases
Solution Approach 1:
The patent transitions from traditional planar interconnection to three-dimensional sidewall interconnection. Conductive structures are formed on the sidewalls of device stacks, enabling interconnections in the vertical dimension while maintaining compact lateral footprint. This dimensional change allows high integration density without proportionally increasing lateral manufacturing complexity.
2Quantity of substance
If multilayer devices are stacked to increase integration level, then the flexibility of interconnection increases, but the heat dissipation problem worsens
Solution Approach 1:
The patent segments the heat dissipation function from the electrical interconnection function. Electrical connections are provided through conductive structures on sidewalls, while thermal management is handled by separate heat dissipation conduits (microchannels) embedded in the substrate. This segmentation allows independent optimization of both electrical and thermal performance in stacked devices.
Solution Approach 2:
The patent introduces heat dissipation conduits as intermediary structures between the active devices and the cooling system. These conduits act as thermal pathways that efficiently conduct heat away from the densely stacked devices, mediating between the heat-generating components and the external cooling mechanism.
3Adaptability or versatility
If lateral interconnection is implemented in stacked devices, then the interconnection flexibility improves, but the heat dissipation capability deteriorates
Solution Approach 1:
The patent uses vertical sidewall interconnection structures that extend along the height of device stacks, providing flexible electrical connections without occupying additional lateral space. Simultaneously, heat dissipation conduits are integrated into the substrate structure, creating independent thermal pathways that do not interfere with the electrical interconnection flexibility.
Data Source
AI summary
A semiconductor apparatus with a heat dissipation conduit in a sidewall interconnection structure, a method of manufacturing the semiconductor apparatus, and an electronic device including the semiconductor apparatus. According to the embodiments, the semiconductor apparatus includes: a carrier substrate having a first region and a second region adjacent to each other; a semiconductor device on the first region; and an interconnection structure on the second region, wherein the interconnection structure includes: an electrical isolation layer; a conductive structure in the electrical isolation layer, wherein at least a part of components require to be electrically connected in the semiconductor device is in contact with and therefore electrically connected to the conductive structure in a lateral direction, wherein the conductive structure is located at a corresponding height in the interconnection structure; and a heat dissipation conduit in the electrical isolation layer.