Semiconductor Sidewall Passivation for Lower Recombination Current
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Solution Overview
Problem
Optoelectronic semiconductor bodies face inefficiencies due to recombination currents caused by unpaired bonds on side walls, leading to reduced intensity of emitted electromagnetic radiation and increased probability of failure.
Innovation Solution
A cover layer made of semiconductor material is grown on the side walls to bind with unpaired bonds, reducing recombination currents by acting as a passivation layer and minimizing lattice mismatch to facilitate epitaxial growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the active region is exposed on the side walls of the layer stack, then the manufacturing process is simplified, but recombination currents occur due to unpaired bonds reducing operational efficiency
Solution Approach 1:
A cover layer is grown on the side walls of the layer stack before final device assembly, preemptively passivating the unpaired bonds on the active region surface. This preliminary action prevents recombination currents from forming, thereby maintaining high operational efficiency while keeping the manufacturing process simple.
2Reliability
If a cover layer is grown on the side walls to passivate unpaired bonds, then recombination currents are reduced improving operational efficiency, but the manufacturing process becomes more complex
Solution Approach 1:
The cover layer is grown by adjusting epitaxial growth parameters (temperature, pressure, gas flow) to control the thickness and composition of the passivation layer. By optimizing these parameters, the cover layer effectively passivates unpaired bonds without requiring additional processing steps, thus improving operational efficiency while minimizing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The application of the cover layer significantly reduces recombination currents, enhancing the operational efficiency of optoelectronic semiconductor bodies by minimizing non-radiative recombination and improving reliability.
Implementation Method 1
A cover layer made of semiconductor material is grown on the side walls to bind with unpaired bonds, reducing recombination currents by acting as a passivation layer and minimizing lattice mismatch to facilitate epitaxial growth.
Data Source
AI summary
An optoelectronic semiconductor body is provided with a layer stack with an active region which is configured to emit electromagnetic radiation and which includes a main extension plane, wherein the layer stack comprises side walls which extend transversely to the main extension plane of the active region, and the side walls are covered at least in places with a cover layer which is formed with at least one semiconductor material. In addition, an arrangement of a plurality of optoelectronic semiconductor bodies and a method for producing an optoelectronic semiconductor body are provided.