Microdevice Sidewall Planarization for Continuous Electrode Deposition

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Solution Overview

Problem

Sidewall indentations in microdevices can cause discontinuation of conductive layers during processing, making it difficult to achieve uniform coverage with thin film deposition.

Innovation Solution

Applying a polymer layer to cover the sidewalls, followed by a dry etching process to remove excess material and leave a thin layer in the indentations, thereby planarizing the sidewalls.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a thin film deposition process is used to deposit conductive layers on sidewalls, then the process is simple and fast, but the conductive layers become disconnected due to sidewall indentations

Engineering Contradiction:

Improvedeposition speedVSAvoidconductive layer continuity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by performing sidewall planarization before the conductive layer deposition. A polymer coating is applied to the sidewalls, followed by a dry etching process that selectively removes material to create a planarized surface. This preparatory step ensures that subsequent thin film deposition will result in continuous, uniform conductive layers without disconnection issues caused by original sidewall indentations

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent uses an intermediary approach by introducing a polymer coating as a temporary mediator during the planarization process. The polymer is applied to the sidewalls, then selectively removed by dry etching to create the desired planarized geometry. This intermediary material facilitates the planarization process without becoming part of the final device structure

Inventive Principle:

Principle #24Intermediary (Mediator)

2Stability of the object's composition

If sidewall indentations are left as-is, then the original device structure is maintained, but conductive layers cannot achieve uniform coverage

Engineering Contradiction:

Improveoriginal device structureVSAvoidconductive layer uniformity

Core Design Contradiction:

Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent applies local quality by selectively modifying only the sidewall regions that require planarization while leaving the rest of the device structure unchanged. The dry etching process with polymer coating is applied locally to the sidewalls to create uniform geometry, while the bulk device structure maintains its original composition and characteristics

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method ensures better coverage and continuity of conductive layers by reducing the sharpness of indentation edges, facilitating subsequent film deposition and enhancing the integrity of microdevice structures.

Implementation Method 1

removing the polymer by a dry etching process

Methodology Applied

Scientific EffectPlasma etching: Plasma

Data Source

PatentUS12532724B2Preventing electrode discontinuation on microdevice sidewall

Publication Date: 2026.01.20 VUEREAL INC

AI summary

This disclosure relates to the process of etching and treatment of side walls while processing microdevices. One aspect is to fill the device wall indentation with a polymer. The disclosure relates to a method and device with its structure to the process of etching and treatment of sidewalls. The methods of etching, coating, and curing are used.