Sidewall Transfer for Fine Interconnect Patterning
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Solution Overview
Problem
The existing sidewall transfer technology faces challenges in forming contact patterns with different dimensions from line patterns in semiconductor manufacturing, particularly in creating finer interconnects and pads with precise dimensions smaller than the critical resolution of photolithography, which affects the reliability and yield of semiconductor devices.
Innovation Solution
A method involving the formation of a first core material with a line portion and a fringe, followed by the deposition of sidewall films, where the sidewall films are used to create interconnects with varying line widths and intervals, allowing for the formation of patterns smaller than the critical dimension of photolithography by repeated sidewall formation and transfer processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sidewall transfer technology is used to form fine interconnect patterns smaller than photolithography critical dimension, then manufacturing precision of interconnect line width is improved, but the ability to form contact patterns with different dimensions is lost
Solution Approach 1:
The patent divides the manufacturing process into two distinct segments: a first sidewall transfer process for forming fine interconnect patterns with precise dimensions, and a second sidewall transfer process for forming contact patterns with different dimensions. This segmentation allows each process to be optimized independently, resolving the contradiction between precision and versatility.
Solution Approach 2:
The patent performs preliminary actions by forming mandrels with different dimensions in different regions before the sidewall transfer process. The first mandrels have dimensions suitable for fine interconnects, while the second mandrels have dimensions suitable for contact patterns. This preliminary differentiation enables subsequent processes to produce both types of patterns with appropriate dimensions.
2Manufacturing precision
If repeated sidewall transfer processes are used to form patterns smaller than 1/4 critical dimension, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by performing the repeated sidewall transfer process selectively in different regions. The first sidewall transfer process is applied in the first region to form fine interconnects, while the second sidewall transfer process is applied in the second region to form contact patterns. This localized application reduces overall process complexity compared to uniformly applying the complex process everywhere.
Solution Approach 2:
The patent uses partial action by performing the repeated sidewall transfer process only where needed for fine patterning, rather than applying it universally. The first sidewall transfer process is performed selectively in the first region, and the second process is performed selectively in the second region, reducing the total number of process steps while maintaining the required precision where necessary.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of semiconductor devices with finer interconnects and pads, improving the reliability and reducing manufacturing failures by securing adequate spacing and processing margins, thus enhancing the overall performance and yield of semiconductor devices without complexifying the manufacturing process.
Implementation Method 1
forming a first sidewall film having the first line width on a side face of the first core material
Data Source
AI summary
According to one embodiment, a method of manufacturing a device, includes forming a first core including a line portion extending between first and second regions and having a first width and a fringe having a dimension larger than the first width, forming a mask on the fringe and on a first sidewall on the first core, removing the first core so that a remaining portion having a dimension larger than the first width is formed below the mask, forming a second sidewall on a pattern corresponding the first sidewall and the remaining portion, the second sidewall having a second width less than the first width and facing a first interval less than the first width in the first region and facing a second interval larger than the first interval in the second region.