Sideways Die Interconnect Layout for Dense Memory-Logic Stacks

The patent transitions from a vertical stack architecture to a sideways architecture where memory dies are oriented laterally relative to the logic die. This dimensional change allows conductive vias to extend horizontally along the side surfaces of memory dies rather than vertically through them, reducing the spatial footprint within each die while maintaining connectivity. The sideways arrangement enables multiple memory dies to be coupled to the logic die without stacking them vertically, thereby conserving internal die space.

By reorienting the stack architecture from vertical to sideways, the patent changes the thermal conduction path. Heat generated in memory dies can now dissipate laterally through the side surfaces and conductive vias that extend horizontally, rather than being confined to vertical pathways. This dimensional shift provides additional thermal escape routes and improves heat dissipation efficiency while maintaining the necessary electrical connectivity.

The sideways architecture enables the implementation of conductive vias and redistribution layers in a lateral configuration, which reduces their projected footprint on the die surface compared to vertical arrangements. This allows sufficient conductive structures to be incorporated for good connectivity while occupying less spatial volume within the die, effectively resolving the trade-off between spatial consumption and connectivity.

The patent employs conductive vias and redistribution layers in a sideways configuration that can be formed using standard semiconductor fabrication processes. The lateral orientation of these conductive structures allows for straightforward integration into existing manufacturing workflows, maintaining manufacturing precision while reducing the overall device complexity compared to complex vertical stacking arrangements that require advanced 3D integration techniques.