SiGe Light-Receiving Element Dark Current Suppression

The pixel array is divided into first pixel regions with Ge/SiGe photoelectric conversion regions and second pixel regions with Si photoelectric conversion regions. This segmentation allows the system to utilize both materials: Ge/SiGe for high quantum efficiency in specific areas and Si for low dark current in other areas, thereby resolving the contradiction between improved quantum efficiency and suppressed dark current.

Different regions of the pixel array are assigned different material compositions tailored to specific functional requirements. The first pixel regions use Ge or SiGe for enhanced infrared light absorption and quantum efficiency, while the second pixel regions use Si for lower dark current characteristics. This local differentiation of material quality optimizes overall system performance by addressing both contradictory requirements in their respective suitable locations.

The pixel array is segmented into specialized regions: first pixel regions using Ge/SiGe for superior infrared detection capability and second pixel regions using Si for maintained sensor sensitivity. This spatial segmentation enables the system to simultaneously achieve enhanced infrared detection where needed while preserving sensitivity through regions with lower dark current, thus resolving the contradiction between detection capability and sensitivity.

Different material compositions are applied to different regions based on their specific detection requirements. The Ge/SiGe regions provide enhanced infrared absorption and detection capability, while the Si regions maintain lower dark current levels that preserve overall sensor sensitivity. This local optimization of material quality allows the system to achieve both improved infrared detection and maintained sensitivity.