SiGe-Selective Etching Composition With Stable Bromide Control
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Solution Overview
Problem
Current semiconductor etching solutions face challenges in achieving a high etching ratio of silicon germanium (SiGe) to silicon (Si) while maintaining excellent storage stability.
Innovation Solution
A semiconductor etching solution comprising a fluoride ion source, a carboxylic acid, a percarboxylic acid, hydrogen peroxide, and bromide ions, with specific mass ratios and concentrations, including a bromide ion content less than 500 mass ppm, and optional components such as sulfuric acid and organic compounds with sulfonic acid groups, to enhance etching efficiency and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etching solution compositions are used to achieve high SiGe etching ratio, then etching performance is improved, but storage stability deteriorates
Solution Approach 1:
The patent applies parameter changes by precisely controlling the concentration ranges of key components: carboxylic acid (5-50 mass%), percarboxylic acid (5-50 mass%), hydrogen peroxide (1-20 mass%), and bromide ions (0.1-500 mass ppm). This systematic parameter optimization enables the solution to achieve high SiGe etching ratios while maintaining storage stability, resolving the technical contradiction between etching performance and solution stability.
Solution Approach 2:
The patent employs a composite etching solution formulation combining multiple components (fluoride ion source, carboxylic acid, percarboxylic acid, hydrogen peroxide, and bromide ions) in specific proportions. This composite approach leverages the synergistic effects of each component to simultaneously achieve high etching selectivity for SiGe and maintain solution stability during storage, effectively resolving the contradiction between etching performance and storage stability.
2Productivity
If bromide ion content is increased to improve etching performance, then SiGe etching ratio is enhanced, but solution stability deteriorates
Solution Approach 1:
The patent applies parameter changes by optimizing the bromide ion concentration to a specific range (0.1-500 mass ppm). This precise parameter control enables the solution to achieve high SiGe etching ratios while preventing excessive bromide accumulation that would compromise solution stability, thereby resolving the contradiction between etching performance and solution reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a large etching ratio of SiGe to Si and excellent storage stability, ensuring effective etching performance and prolonged solution usability.
Implementation Method 1
a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions
Implementation Method 2
hydrogen peroxide
Data Source
AI summary
Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.