SiGe Thermoelectric Material Quantum Network Structure

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Solution Overview

Problem

Conventional thermoelectric materials fail to achieve significant improvements in the dimensionless performance index ZT, leading to suboptimal thermoelectric characteristics due to insufficient quantum effects from nanoparticles, where the particle size and interparticle distance do not effectively exhibit a quantum effect, resulting in low Seebeck coefficients and conductivity.

Innovation Solution

A thermoelectric material comprising Si and Ge with nanoparticles distributed in a quantum network structure, where the particle size is not greater than 5 nm and the interparticle distance is not greater than 2 nm, controlled by adjusting the concentration of a second material and the Si/Ge composition ratio, allowing for optimal quantum effects and enhanced thermoelectric performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If nanoparticles are formed in conventional thermoelectric materials, then the dimensionless performance index ZT is expected to improve, but the quantum effects are insufficient due to inadequate particle size and interparticle distance control

Engineering Contradiction:
Improvethermoelectric characteristicsVSAvoidparticle size and interparticle distance control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by precisely controlling the particle size (not greater than 5 nm) and interparticle distance (not greater than 2 nm) of nanoparticles. This is achieved by adjusting the concentration of the second material and the Si/Ge composition ratio, which directly changes the physical parameters of the material structure to optimize quantum effects and thermoelectric performance.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses composite materials by creating a quantum network structure consisting of nanoparticles distributed in a matrix material. The composite structure combines the quantum confinement effects of nanoparticles with the bulk properties of the surrounding material, achieving enhanced thermoelectric characteristics that neither component could provide alone.

Inventive Principle:
Principle #40Composite materials

2Power

If the particle size is reduced to enhance quantum effects, then the Seebeck coefficient and conductivity improve, but the manufacturing precision required to achieve optimal particle size and distribution increases

Engineering Contradiction:
ImproveSeebeck coefficient and conductivityVSAvoidnanoparticle size and distribution control
Core Design Contradiction:
PowerVSManufacturing precision

Solution Approach 1:

The patent changes material parameters by controlling the concentration of the second material and the Si/Ge composition ratio, which indirectly controls the nanoparticle size and distribution. This approach allows optimization of quantum effects while using compositional parameters that are more easily controlled during manufacturing than direct particle size control.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If the quantum network structure is optimized to improve thermoelectric performance, then the dimensionless performance index ZT increases, but the complexity of controlling composition ratio and material concentration increases

Engineering Contradiction:
Improvedimensionless performance index ZTVSAvoidcomposition control complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent simplifies the control complexity by using two key compositional parameters (concentration of second material and Si/Ge composition ratio) to simultaneously control multiple structural features including particle size, interparticle distance, and phase distribution. This reduces the number of independent control variables needed to optimize the quantum network structure.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach results in improved thermoelectric characteristics by effectively controlling the quantum network structure, enhancing the Seebeck coefficient and conductivity, thereby increasing the dimensionless performance index ZT and achieving better thermoelectric conversion efficiency.

Implementation Method 1

Conventional thermoelectric materials fail to achieve significant improvements in the dimensionless performance index ZT, leading to suboptimal thermoelectric characteristics due to insufficient quantum effects from nanoparticles

Methodology Applied
Scientific EffectQuantum confinement effect:

Implementation Method 2

Seebeck coefficient S and thermal conductivity K can be controlled by lowering a dimension of carriers (free electrons or free holes) and increasing phonon scattering owing to quantum wells and quantum wires

Methodology Applied
Scientific EffectPhonon scattering:

Implementation Method 3

Seebeck coefficient S and thermal conductivity K can be controlled by lowering a dimension of carriers

Methodology Applied
Scientific EffectSeebeck effect: Seebeck Effect

Data Source

PatentUS10707399B2Thermoelectric material, thermoelectric element, optical sensor, and method of manufacturing thermoelectric material
Publication Date: 2020.07.07 SUMITOMO ELECTRIC INDUSTRIES LTD
  • US10707399B2 patent drawing
  • US10707399B2 patent drawing
  • US10707399B2 patent drawing

AI summary

Better thermoelectric characteristics of a thermoelectric material containing nanoparticles are achieved. The thermoelectric material contains a plurality of nanoparticles distributed in a mixture of a first material having a band gap and a second material different from the first material. The first material contains Si and Ge. A concentration of atoms of the second material and a composition ratio of Si to Ge satisfy relational expressions in expressions (1) and (2) below with c representing a concentration of atoms (unit of atomic %) of the second material in the thermoelectric material and r representing the composition ratio of Si to Ge:r≤0.62c−0.25  (1)r≥0.05c−0.06  (2).