Signal Receiving Circuit With Dynamic Reference Voltage Adjustment

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Solution Overview

Problem

Memory storage devices face inefficiencies in error handling due to changes in operating environment or signal interference, leading to frequent connection reestablishments and perceived poor signal stability.

Innovation Solution

A signal receiving circuit with a multi-stage sensing circuit, edge detecting circuit, and control circuit that dynamically adjusts reference voltage levels based on edge information to improve anti-interference capability without affecting signal transmission performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If the memory storage device uses a predetermined reference voltage level to sense the signal, then the device structure is simple, but the error rate increases when operating environment changes or signal is interfered

Engineering Contradiction:
Improvedevice structureVSAvoiderror rate
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent implements dynamic adjustment of reference voltage levels based on edge information detected from the signal. The control circuit continuously monitors the signal and adjusts the reference voltage levels accordingly, transforming the static reference voltage system into a dynamic one that adapts to changing operating conditions, thereby reducing errors without significantly increasing device complexity

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent introduces a feedback mechanism where the control circuit uses edge information detected from the signal to adjust the reference voltage levels. This closed-loop feedback system allows the device to automatically correct for environmental changes and signal interference, improving reliability while maintaining manageable complexity through automated control

Inventive Principle:
Principle #23Feedback

2Reliability

If the memory storage device waits until a large number of errors occur before reestablishing connection, then the error handling is conservative, but the productivity decreases due to inefficient error handling

Engineering Contradiction:
Improveerror handling conservatismVSAvoiderror handling efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements preliminary action by continuously monitoring edge information and proactively adjusting reference voltage levels before a large number of errors occur. The control circuit detects changes in the signal and preemptively adjusts the reference voltage, preventing errors from accumulating and triggering frequent connection reestablishments, thus improving both reliability and productivity

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the memory storage device repeatedly performs connection reestablishment due to temporary factors, then the signal transmission stability is maintained, but the host system perceives poor signal transmission stability

Engineering Contradiction:
Improvesignal transmission stabilityVSAvoidhost system perception
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent uses dynamic reference voltage adjustment to maintain signal transmission stability during temporary environmental changes. By continuously adapting the reference voltage levels based on real-time edge information, the device can withstand temporary disturbances without triggering connection reestablishments, presenting stable signal transmission to the host system while maintaining actual reliability

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20250391480A1Signal receiving circuit, memory storage device and reference voltage adjustment method
Publication Date: 2025.12.25 PHISON ELECTRONICS
  • US20250391480A1 patent drawing
  • US20250391480A1 patent drawing
  • US20250391480A1 patent drawing

AI summary

A signal receiving circuit, a memory storage device, and a reference voltage adjustment method are provided. The method includes: obtaining a first signal and a plurality of reference voltage levels; sensing a voltage relative relationship between the first signal and the plurality of reference voltage levels, where the voltage relative relationship reflects bit data carried by the first signal; detecting edge information of the first signal; and adjusting at least one of the plurality of reference voltage levels according to the edge information.