Silacyclopropane Precursors for Low-Temperature Silicon Film Deposition
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Solution Overview
Problem
Current methods for depositing silicon-containing films at low temperatures (less than 400°C) without plasma co-reagents are limited due to the low reactivity of silicon precursors and the presence of halides in existing silicon ALD/CVD precursors, which hinder commercial viability and conformal coating on high aspect structures.
Innovation Solution
The use of silacyclopropane-based precursors that decompose to form silylenes in situ, allowing for the deposition of silicon-containing films at low temperatures through ALD or CVD processes, eliminating the need for plasma co-reagents and resulting in halide-free films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional silicon precursors are used for deposition, then the process can be performed, but the reaction rate is too slow to be practical for commercial applications
Solution Approach 1:
The patent changes the chemical structure of silicon precursors by introducing fluorinated cycloalkyl groups and specific functional groups (carboxyl, ester, amide) to enhance reactivity. This modifies the chemical parameters of the precursor molecules to achieve faster reaction rates while maintaining controlled deposition behavior.
Solution Approach 2:
The patent employs composite precursor molecules that combine fluorinated cycloalkyl groups with various functional groups (carboxyl, ester, amide, etc.). These composite structures leverage the high reactivity of fluorinated compounds while the functional groups provide controlled chemisorption characteristics, achieving both fast reaction rates and reliable film deposition.
2Productivity
If halide-containing silicon precursors are used, then deposition can proceed, but halides end up in the deposited film causing problems
Solution Approach 1:
The patent removes halide atoms from the precursor molecular structure entirely. Instead of using halide-containing compounds, it employs fluorinated cycloalkyl groups with specific functional groups that decompose to form silylene species without introducing harmful halides into the deposited film, while still maintaining adequate reactivity for practical deposition rates.
Solution Approach 2:
The patent uses fluorinated cycloalkyl groups with functional groups that serve as temporary, disposable elements during the deposition process. These groups (carboxyl, ester, amide, etc.) are designed to decompose rapidly to form the desired silylene species, then disappear from the system, leaving no harmful residues in the deposited film.
3Temperature
If low temperature deposition is used, then energy consumption is reduced, but the reactivity of silicon precursors is insufficient
Solution Approach 1:
The patent fundamentally changes the reactivity parameters of silicon precursors by introducing fluorinated cycloalkyl groups with specific functional groups. This chemical modification enables the precursors to react at low temperatures (below 400°C) without requiring plasma enhancement, as the fluorinated structure provides inherent high reactivity that compensates for the lower thermal energy available.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the deposition of silicon-containing films like SiN, SiCN, and SiO2 at low temperatures with rapid reaction rates, providing commercially viable and conformal coatings without the use of plasma, thus addressing the limitations of existing technologies.
Implementation Method 1
silacyclopropane-based precursors that decompose to form silylenes in situ
Implementation Method 2
allowing for the deposition of silicon-containing films at low temperatures through ALD or CVD processes
Implementation Method 3
sequential, surface reactions to form layers of precise thickness
Data Source
AI summary
Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.