Silane Additive for Semiconductor Etching Selectivity and Particle Control
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Solution Overview
Problem
Current etching compositions for removing silicon nitride films in semiconductor manufacturing face challenges such as reduced etching selectivity, particle formation, and storage stability issues, leading to defects in devices and equipment failure.
Innovation Solution
A novel silicon compound, represented by Formula 1, is introduced as a silane additive to enhance solubility and selectivity in etching compositions, preventing particle formation and maintaining etching speed by binding to oxide films and stabilizing the etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If phosphoric acid is used for removing nitride film, then etching capability is improved, but etching selectivity between nitride film and oxide film deteriorates
Solution Approach 1:
The patent modifies the chemical composition parameters of the etching solution by adding specific silane compounds to phosphoric acid, changing the etching mechanism to achieve both high etching rate and high selectivity simultaneously
Solution Approach 2:
The patent creates a composite etching solution combining phosphoric acid with silane compounds, where the composite formulation provides synergistic effects that improve both etching speed and selectivity
2Manufacturing precision
If silane-based additive is added to etching solution, then etching selectivity is improved, but particle formation occurs
Solution Approach 1:
The patent optimizes the molecular structure parameters of silane compounds and their concentration in the etching solution to achieve adequate solubility, preventing particle precipitation while maintaining high etching selectivity
3Manufacturing precision
If conventional silicate or silicic acid is used in etching composition, then etching selectivity is improved, but particle formation affects substrate quality
Solution Approach 1:
The patent changes the chemical structure parameters from silicate/silicic acid to specifically designed silane compounds with improved solubility characteristics, eliminating particle formation while maintaining etching selectivity
Solution Approach 2:
The patent uses organosilane compounds that dissolve completely and are consumed in the etching process without forming persistent particles, replacing the problematic silicate-based additives
4Duration of action of stationary object
If etching composition is stored long-term, then availability is improved, but etching rate and selectivity change
Solution Approach 1:
The patent inverts the stability relationship by making the etching solution composition stable over time through proper formulation, preventing the degradation that normally occurs with long-term storage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon compound significantly improves the etching selectivity of nitride films over oxide films, reduces particle formation, and maintains stable etching rates, addressing the limitations of existing compositions and ensuring device quality and equipment reliability.
Implementation Method 1
maintaining etching speed by binding to oxide films
Implementation Method 2
enhance solubility and selectivity in etching compositions, preventing particle formation
Data Source
AI summary
The present disclosure relates to a silicon compound represented by Formula 1 below:wherein R1 to R6 are each independently selected from a hydrogen, a hydrocarbyl group and a non-hydrocarbyl group, L is a direct bond or hydrocarbylene, X is oxygen (O) or sulfur (S), Y and Z are each independently selected from NR7, O, and S, where R7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and Y and Z are not simultaneously NR7, and A is an n-valent radical, where n is an integer of 1 to 6.