Silane Coupling Agent for Uniform Impurity Diffusion in 3D Semiconductors
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Solution Overview
Problem
Existing methods for diffusing impurity components into semiconductor substrates, such as ion implantation and CVD, face challenges in achieving uniformity and avoiding defects, especially when dealing with three-dimensional structures on a nanometer scale, leading to performance issues in devices like CMOS image sensors and logic LSI devices.
Innovation Solution
A diffusing agent composition incorporating a silane coupling agent with an alkyl group containing at least one amino group is used, which generates a silanol group by hydrolysis, allowing for uniform coating and effective diffusion of impurity components like boron and phosphorus into semiconductor substrates, even those with complex three-dimensional structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation method is used to diffuse impurity into semiconductor substrate, then impurity diffusion can be achieved, but point defects or point defect clusters are easily formed near the surface, reducing element performance
Solution Approach 1:
The patent uses a coating film as an intermediary layer between the impurity source and the semiconductor substrate. This coating film contains the impurity diffusion component and releases it gradually during heating, avoiding direct ion implantation that causes point defects. The coating film acts as a mediator that enables impurity diffusion while protecting the substrate from damage.
Solution Approach 2:
The patent replaces the mechanical ion implantation process with a chemical diffusion process. Instead of physically bombarding the substrate with ions, the impurity is introduced through thermal diffusion from a coating film, substituting a mechanical system with a thermal-chemical system that avoids defect formation.
2Manufacturing precision
If ion implantation method is used on three-dimensional structures, then impurity diffusion can occur, but uniform implantation into side surfaces and inner surfaces of concave portions is difficult
Solution Approach 1:
The coating film serves as an intermediary that can conformally cover complex three-dimensional surfaces including side walls and inner surfaces of concave portions. This intermediary layer enables uniform impurity distribution across complex geometries that are difficult to achieve with direct ion implantation.
Solution Approach 2:
The patent changes the state of impurity introduction from a directional beam process (ion implantation) to a thermal diffusion process. By changing parameters such as temperature and using a coating film as the impurity source, uniform diffusion is achieved across complex three-dimensional structures regardless of surface orientation.
3Manufacturing precision
If CVD method is used to form oxide film with impurity, then impurity diffusion can occur, but overhang phenomenon makes it difficult to coat entire inner surface uniformly and blocks opening portions
Solution Approach 1:
The patent uses a coating film as an intermediary impurity source that can be applied uniformly to three-dimensional structures. This coating film replaces the oxide film intermediary used in CVD, solving the overhang problem by allowing conformal coating of inner surfaces without blocking openings.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables satisfactory and uniform diffusion of impurity components, reducing defects and enhancing the performance of semiconductor devices by ensuring high concentration and uniform distribution of dopants within the substrate.
Implementation Method 1
a silane coupling agent which includes an alkyl group having at least one amino group and generates a silanol group by hydrolysis
Implementation Method 2
diffusing an impurity diffusion component into a semiconductor substrate
Data Source
AI summary
A diffusing agent composition that can efficiently form a thin film in which an impurity diffusion component can be diffused into a semiconductor substrate at a higher concentration than a conventional one and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition includes an impurity diffusion component and a silane coupling agent the silane coupling agent including a group which generates a silanol group by hydrolysis and alkyl groups and at least one of the alkyl groups includes, in a chain and/or at an end, at least one amino group selected from a primary amino group, a secondary amino group and a tertiary amino group.