Silane-Phosphorus Treatment for Semiconductor Pattern Collapse
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Solution Overview
Problem
The manufacturing of semiconductor devices faces challenges such as pattern collapse due to surface tension during drying, and the alteration of dielectric film properties after etching, which affects the hydrophilicity and dielectric constants of organosilicate glass films.
Innovation Solution
A treatment composition comprising a silane-and-phosphorus-containing compound is developed, formed by reacting silane-containing and phosphorus-containing components, which can be applied to semiconductor or MEMS substrates to modify surface characteristics, reduce pattern collapse, and restore low dielectric constants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If water or chemical solution is used for rinsing the substrate surface, then cleaning effectiveness is improved, but surface tension causes pattern collapse during drying
Solution Approach 1:
The patent changes the chemical composition parameters of the rinsing solution by incorporating fluorinated compounds and surfactants, which modify the surface tension characteristics of the liquid. This parameter change allows the solution to maintain effective cleaning while reducing the harmful surface tension effects that cause pattern collapse during drying.
Solution Approach 2:
The patent introduces surfactant molecules as intermediary substances between the water/chemical solution and the substrate surface. These surfactants act as mediators that reduce surface tension and prevent direct harmful interactions between the rinsing liquid and the delicate patterns on the substrate, thereby preventing pattern collapse.
2Loss of substance
If etching treatment is applied to organosilicate glass dielectric films, then material removal is achieved, but hydrophilic characteristics and altered dielectric properties are introduced
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition of the dielectric film through targeted fluorination treatments. This changes the surface chemistry parameters to restore hydrophobicity and stabilize dielectric properties after etching has altered the original film characteristics.
Solution Approach 2:
The patent employs oxidative treatments (such as oxygen plasma or ozone exposure) to modify the surface chemistry of the etched dielectric film. This accelerated oxidation process restores the dielectric film's original properties by removing hydrophilic contaminants and restoring the desired hydrophobic characteristics and dielectric constant.
3Quantity of substance
If conventional drying steps are performed after rinsing, then liquid removal is achieved, but pattern collapse occurs due to surface tension
Solution Approach 1:
The patent applies preliminary action by pre-treating the substrate surface with a protective coating or modifying the rinsing solution composition before the drying step. This preliminary modification creates a protective layer or alters surface properties in advance, preventing pattern collapse during the subsequent drying process where liquid removal occurs.
Solution Approach 2:
The patent introduces an intermediary substance (such as a protective coating layer or modified surface chemistry) between the liquid being removed and the pattern structures. This intermediary prevents direct harmful interactions during drying, allowing liquid removal while maintaining pattern integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment composition effectively prevents pattern collapse during drying and restores low dielectric constants, enhancing the hydrophobicity and stability of dielectric films on semiconductor devices.
Implementation Method 1
a treatment composition comprising a silane-and-phosphorus-containing compound formed by reacting a mixture comprising one or more silane-containing components and one or more phosphorus-containing components
Implementation Method 2
enhancing the hydrophobicity and stability of dielectric films
Data Source
AI summary
Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.