Silane Surface Treatment for Wet-Dry Pattern Collapse in Semiconductors
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Solution Overview
Problem
Pattern collapse during wet clean and drying processes in semiconductor manufacturing, particularly at sub-20 nm critical dimensions, is a significant issue due to high capillary forces, with other chemical and substrate properties also contributing to the collapse phenomenon.
Innovation Solution
A surface treatment composition comprising a Si-containing compound with a Si—H group, an amine compound with a N—H group, and an organic protic solvent is used to treat semiconductor substrates, reducing capillary forces and minimizing pattern collapse by forming a hydrophobic siloxane layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional wet clean and drying processes are used, then manufacturing simplicity is maintained, but pattern collapse occurs due to high capillary forces
Solution Approach 1:
The patent applies a surface treatment composition containing silane compounds and amine compounds to the substrate surface before the wet clean and drying processes. This preliminary treatment forms a protective layer that modifies surface properties, enabling the substrate to withstand subsequent capillary forces during rinsing and drying without pattern collapse.
Solution Approach 2:
The invention changes the surface energy parameters of the substrate by applying chemical compounds that modify wettability and surface tension characteristics. The silane and amine compounds alter the surface chemistry, creating a state where capillary forces are reduced and pattern features remain stable during wet processing.
2Reliability
If surface treatment composition is applied, then pattern collapse is reduced, but process complexity increases
Solution Approach 1:
The patent combines multiple functional compounds (silane compounds, amine compounds, and organic solvents) into a single surface treatment composition that can be applied in one step. This merged approach provides multiple benefits - surface modification, capillary force reduction, and pattern protection - through a unified treatment process rather than separate sequential steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment significantly reduces the number of collapsed pattern features on semiconductor substrates during drying or rinsing, achieving up to 99% uncollapsed patterns, thereby improving the reliability of semiconductor manufacturing processes.
Implementation Method 1
contacting the surface with a surface treatment composition comprising (1) at least one Si-containing compound comprising a Si—H group; (2) at least one amine compound comprising a N—H group; and (3) at least one organic protic solvent
Implementation Method 2
treating the pattern on a surface of a semiconductor substrate with a surface treatment composition to reduce the capillary forces that drive pattern collapse
Implementation Method 3
The conventional theory of pattern collapse implicates high capillary forces during rinse and dry as major contributors leading to the collapse phenomenon
Data Source
AI summary
This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.