Silazane Polymer Radiolucent Body for LED Thermal Stability
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Solution Overview
Problem
Optoelectronic semiconductor components face stability issues due to damage from thermal heating and electromagnetic radiation, leading to short service life, particularly affecting the radiation-transmissive body near the semiconductor chip.
Innovation Solution
A radiation-transmissive body formed with a polymer containing silazane monomers, which provides high thermal and radiation stability, is used in indirect contact with the semiconductor chip, and can be easily applied and hardened at low temperatures, incorporating a luminescence conversion material for wavelength conversion and post-processing for adaptation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional radiolucent body is used near the semiconductor chip, then the device can be manufactured, but the radiolucent body suffers damage from thermal heating and electromagnetic radiation, leading to short service life
Solution Approach 1:
The patent employs a composite material system consisting of a silazane-based polymer matrix combined with specific inorganic fillers and stabilizers. This composite structure provides both mechanical integrity and resistance to thermal and radiation damage, allowing the radiolucent body to withstand harsh operating conditions near the semiconductor chip while maintaining its optical and structural properties over extended service life
2Strength
If the radiolucent body is applied and hardened at high temperatures, then the material achieves optimal mechanical properties, but the semiconductor chip and surrounding components are exposed to excessive thermal stress
Solution Approach 1:
The patent utilizes a silazane-based polymer material that undergoes curing at relatively low temperatures (typically below 150°C). This parameter change in curing temperature allows the radiolucent body to achieve optimal mechanical properties without exposing the semiconductor chip and surrounding components to excessive thermal stress, thereby resolving the contradiction between material strength and thermal exposure
3Reliability
If a highly cross-linked polymer is used to improve radiation resistance, then the material becomes more stable, but the manufacturing precision and ease of application are reduced
Solution Approach 1:
The patent employs a silazane-based polymer with controlled cross-linking density that provides adequate radiation stability while maintaining good processability. The material formulation allows for localized optimization where the polymer chain structure and cross-linking are designed to achieve the necessary balance between radiation resistance and manufacturing precision, enabling accurate application and controlled hardening
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the aging stability of the semiconductor component by preventing damage from thermal and radiation exposure, allowing for flexible adaptation and maintaining the mechanical and optical integrity of the component.
Implementation Method 1
a radiolucent body formed with or containing a polymer, in which a monomer of the polymer is formed with at least one silazane
Implementation Method 2
which is suitable for absorbing electromagnetic radiation in a first wavelength range and for converting the absorbed electromagnetic radiation into electromagnetic radiation in a second wavelength range with longer wavelengths than the first wavelength range
Data Source
Figure 1A~1C
AI summary
The invention relates to an optoelectronic semiconductor component comprising: at least one radiation emitting semiconductor chip (2) which has a radiation decoupling surface (22), through which at least one part of the electromagnetic radiation generated in the semiconductor chip (2) leaves the semiconductor chip (2); at least one radiation-permeable body (3), downstream at least at points of the semiconductor chip (2) on the radiation decoupling surface (22) thereof, which is in at least indirect contact with the semiconductor chip (2), wherein the radiation-permeable body (3) is formed with at least one polymer or comprises at least one polymer, and one monomer of the polymer is formed having at least one silazane.