Silazane Film Pre-Baking for Semiconductor Device Manufacturing
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Solution Overview
Problem
The miniaturization of semiconductor devices such as LSI, DRAM, and Flash Memory has made it challenging to lower processing temperatures while maintaining high quality and improving manufacturing throughput, especially due to issues with polysilazane film processing that result in foreign matter generation and reduced miniaturization capabilities.
Innovation Solution
A method involving pre-baking a substrate with a silazane bond film, followed by supplying oxygen-containing gas at a temperature not higher than the pre-baking temperature and then processing gas containing steam or hydrogen peroxide at a higher temperature to improve film characteristics and suppress the separation of low molecular weight polysilazane, thereby reducing particle generation and maintaining quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the processing temperature is lowered to maintain high quality in miniaturized semiconductor devices, then film quality is improved, but manufacturing throughput deteriorates
Solution Approach 1:
The patent applies preliminary action by performing pre-baking treatment on the silazane bond film before the main oxidation process. This pre-baking step removes low molecular weight polysilazane and prevents particle generation during subsequent processing, thereby enabling high-quality film formation at lower processing temperatures without sacrificing manufacturing throughput. The pre-baking is conducted at a controlled temperature and atmosphere to prepare the film structure in advance for the main processing step.
Solution Approach 2:
The patent utilizes parameter changes by carefully controlling the processing temperature, oxygen concentration, and atmosphere composition during pre-baking and main oxidation steps. By optimizing these parameters, the process achieves high-quality oxide film formation at lower temperatures while maintaining efficient manufacturing throughput. The temperature and atmospheric parameters are specifically adjusted to prevent particle generation and ensure film quality.
2Quantity of substance
If miniaturization is pursued to increase device density, then device capacity is improved, but particle generation increases reducing quality
Solution Approach 1:
The patent applies preliminary action by conducting pre-baking treatment before the main oxidation process to remove low molecular weight polysilazane from the silazane bond film. This preliminary step prevents particle generation during subsequent processing, thereby enabling miniaturization and high device density without compromising quality due to particle contamination. The pre-baking prepares the film structure in advance to avoid particle formation during miniaturized device fabrication.
3Manufacturing precision
If CVD method is used to form oxide film, then film quality is improved, but processing capability reaches technical limit for fine structures
Solution Approach 1:
The patent applies composite materials by combining silazane bond film with oxide film through a two-step process: pre-baking to form a prepared structure, followed by oxidation to form the final composite oxide film. This composite approach allows the material to exhibit properties suitable for fine structure embedding, overcoming the technical limits of conventional CVD methods while maintaining high film quality. The silazane-oxide composite structure enables better performance in miniaturized devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This technique enhances the characteristics of the film formed on the substrate, reduces particle generation, and improves manufacturing throughput by preventing the separation of low molecular weight polysilazane and maintaining the quality of the processed product.
Implementation Method 1
supplying oxygen-containing gas to the substrate at a first temperature not higher than the temperature of the pre-baking
Implementation Method 2
supplying processing gas containing at least any one of steam or hydrogen peroxide to the substrate at a second temperature higher than the first temperature
Implementation Method 3
supplying processing gas containing at least any one of steam or hydrogen peroxide
Implementation Method 4
the film being subjected to pre-baking
Data Source
AI summary
To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.