Silica Layer Composition for Selective Etching in Semiconductor Devices
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Solution Overview
Problem
Existing silica layer compositions for flat panel display devices do not effectively control the etching rates inside and on top of patterns, leading to inefficient removal of the silica layer during subsequent processes, which affects the formation of air gaps and insulation in semiconductor and display applications.
Innovation Solution
A composition comprising a silicon-containing polymer and solvent, where the etching rates inside and on top of patterns satisfy specific relations, allowing for selective removal of the silica layer, formed by curing the composition, which includes organic-inorganic polysilazane or polysiloxazane, and optionally thermal acid generators and surfactants, to achieve controlled etching and air gap formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a silica layer is formed using conventional compositions, then the silica layer provides insulation and structural support, but the etching rates inside and on top of patterns cannot be effectively controlled, leading to inefficient removal during subsequent processes
Solution Approach 1:
The composition creates different etching rates in different locations of the silica layer. The silica layer formed inside patterns has a different etching rate (controlled by local composition) compared to the silica layer on top of patterns, enabling selective removal. This is achieved through the specific polymer structure and composition that responds differently to etching conditions in confined versus open spaces.
Solution Approach 2:
The invention changes the chemical composition parameters of the silica layer by using specific polymers (polysilazane, polysiloxazane, or their mixtures) with controlled ratios. This composition control enables the silica layer to exhibit different etching rates under the same etching conditions, allowing precise control over removal efficiency in different pattern regions.
2Reliability
If the silica layer is removed inside patterns to form air gaps, then insulation is improved and leakage currents are prevented, but the process becomes more complex and time-consuming
Solution Approach 1:
The composition is designed in advance to provide different etching rates in different locations. This preliminary design of the silica layer composition enables subsequent selective removal to proceed efficiently without requiring complex additional process steps. The differential etching behavior is built into the material itself, simplifying the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition ensures selective removal of the silica layer inside patterns, enabling the formation of air gaps and improved insulation in semiconductor processes, preventing leakage currents and allowing for precise pattern formation, thus enhancing the reliability and efficiency of semiconductor and display devices.
Implementation Method 1
a composition for forming a silica layer includes a silicon-containing polymer and a solvent, wherein a silica layer formed from the composition for forming the silica layer satisfies Relation 1
Implementation Method 2
a and b may be etch rates obtained by a wet etch method
Data Source
AI summary
Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.