Silica Polishing Particles for Scratch-Free CMP
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Solution Overview
Problem
Conventional silica-based polishing particles face challenges in achieving a balance between polishing rate, surface smoothness, and preventing scratches and particle residues during the CMP process for semiconductor integrated circuits, with existing solutions either compromising on polishing rate or leaving residues on the substrate.
Innovation Solution
A silica-based polishing particle with a three-dimensional polycondensation structure, having an average particle diameter of 5 to 300 nm, a carbon content of 0.005% to 0.50% by mass, and specific impurity content levels, which provides high hardness, spherical shape, and reduced alkoxy groups to enhance dispersibility and prevent particle aggregation, thus achieving a high polishing rate and smoothness while minimizing residues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional silica-based polishing particles are used, then a certain polishing rate is achieved, but scratches and particle residues are generated on the substrate surface
Solution Approach 1:
The patent applies parameter changes by precisely controlling the carbon content (0.003-5% by weight) and compressive elastic modulus (500-3000 kgf/mm²) of the silica-based polishing particles. This optimization allows the particles to achieve both high polishing rate and smooth surface finish without generating scratches or residues, resolving the contradiction between productivity and surface quality
Solution Approach 2:
The patent uses composite materials by incorporating organic-inorganic composite particles that contain both silica and carbon components. This composite structure enables the polishing particles to maintain high hardness for efficient polishing while the organic components reduce particle aggregation and prevent residue formation, simultaneously achieving high polishing rate and surface smoothness
2Stability of the object's composition
If the carbon content of alkoxy residues in silica particles is increased to 0.5-5% by weight, then particle aggregation is reduced and dispersibility is improved, but the polishing rate decreases
Solution Approach 1:
The patent applies parameter changes by optimizing the carbon content to a specific range (0.003-5% by weight) and controlling the compressive elastic modulus (500-3000 kgf/mm²). This precise parameter optimization achieves the right balance between dispersibility and polishing rate, allowing particles to remain well-dispersed while maintaining sufficient hardness for efficient polishing
3Productivity
If the compressive elastic modulus of silica particles is increased to 500-3000 kgf/mm², then polishing rate is improved, but particle aggregation increases and dispersibility decreases
Solution Approach 1:
The patent applies parameter changes by simultaneously optimizing multiple parameters: carbon content (0.003-5% by weight), compressive elastic modulus (500-3000 kgf/mm²), and particle size distribution. This multi-parameter optimization ensures that particles have sufficient hardness for high polishing rate while maintaining appropriate surface properties that prevent aggregation and ensure good dispersibility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silica-based polishing particle effectively polishes semiconductor substrates at a sufficient rate with high smoothness and prevents scratches and particle residues, making it suitable for advanced semiconductor manufacturing processes.
Implementation Method 1
The abrasive used in the CMP method is typically composed of: a spherical polishing particle which consists of a metal oxide such as silica and alumina
Implementation Method 2
an oxidant for increasing the polishing rate of a wiring/circuit metal
Data Source
AI summary
Provided is a silica-based polishing particle which can polish and flatten the surface of a substrate at a sufficient polishing rate with generation of scratches prevented, and successfully prevents generation of particle residues on a substrate after polishing. A silica-based polishing particle with a three-dimensional polycondensation structure containing an alkoxy group, wherein the particle has an average particle diameter (d) of 5 to 300 nm, an aspect ratio of 1.00 or more and 1.20 or less, and a carbon content of 0.005% by mass or more and less than 0.50% by mass.