Silicene Material Layer Doping for Band Gap Control
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Solution Overview
Problem
Current silicene material layers and switching devices face challenges in controlling the band gap and electron transportation due to their similar structure to graphene, which limits their application in electronic devices.
Innovation Solution
A silicene material layer with a 2-dimensional honeycomb structure is doped with materials from Group 1, Group 2, and Group 17, and includes regions doped with p-type and n-type dopants, allowing for controlled band gap modification and enhanced electron transportation, integrated into electronic devices with specific gate and electrode configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If silicene is used with a 2-dimensional honeycomb structure similar to graphene, then electron transportation is enhanced, but band gap control is limited
Solution Approach 1:
The patent applies local quality by creating different doped regions within the silicene layer, including p-type doped regions, n-type doped regions, and undoped regions. Each region has different doping concentrations and types, allowing localized control of electrical properties and band gap characteristics while maintaining the overall 2-dimensional honeycomb structure for electron transportation
Solution Approach 2:
The patent changes physical and chemical parameters by introducing various dopants (Group 13 elements like B, Al; Group 15 elements like P, As; Group 1 elements like Li, Na; Group 2 elements like Mg, Ca) at different concentrations. This allows continuous adjustment of carrier concentration, Fermi level position, and band gap width to achieve desired electrical characteristics
2Reliability
If doping regions are added to control electron transportation, then device performance is improved, but device complexity increases
Solution Approach 1:
The patent segments the silicene layer into distinct functional regions: p-type doped regions for hole conduction, n-type doped regions for electron conduction, and undoped regions for maintaining intrinsic properties. This segmentation allows independent optimization of each region's characteristics while forming integrated functional devices
Solution Approach 2:
The patent creates multi-functional silicene structures where the same base material (silicene with 2-dimensional honeycomb structure) serves multiple functions through different doping configurations. The undoped regions maintain high electron mobility, while doped regions provide carrier injection and electrical contact functions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doping of silicene material layers enables precise control over the band gap and electron mobility, improving the performance of electronic devices such as transistors and diodes by increasing integration density and mobility.
Implementation Method 1
the silicene material layer includes a doping region doped with at least one material from the group of Group 1, Group 2, Group 16 and Group 17, and at least one of a p-type dopant and an n-type dopant
Data Source
AI summary
Provided are silicene material layers and electronic devices having a silicene material layer. The silicene material layer contains silicon atoms in a 2-dimensional honeycomb structure formed as one of a monolayer and a double layer. The silicene material layer includes a doping region doped with at least one material from the group of Group 1, Group 2, Group 16 and Group 17 and at least one of a p-type dopant or an n-type dopant.