Silicene Ohmic Contact via Low Work Function Electrodes
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Solution Overview
Problem
Forming an ohmic contact in silicene electronic devices is challenging due to their thin single or double layer structure, making it difficult to achieve efficient electrode connections, particularly in silicon-based devices where existing methods are not effective.
Innovation Solution
A silicene electronic device with a 2D honeycomb structure doped with Group I, II, and XVI materials, featuring p-type and n-type dopant regions, and an electrode material layer with a lower work function than silicene, including electrides like C12A7 or Y5Si3, and a graphene layer to facilitate ohmic contact formation without the need for implantation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If implantation method is used to reduce Schottky contact width and height, then ohmic contact is achieved in conventional devices, but it becomes difficult to form ohmic contact in silicene due to its very small thickness
Solution Approach 1:
The patent changes the work function parameter of the electrode material to form an ohmic contact. By selecting electrode materials with work functions lower than the electron affinity of silicene (such as electrides, Mg, Ca, Y, La, or Er), the Schottky barrier is eliminated without requiring high-concentration doping or implantation methods, thus solving the manufacturing difficulty while maintaining contact quality.
Solution Approach 2:
The patent introduces an intermediate layer between the silicene and the electrode material. This intermediate layer acts as a mediator to facilitate ohmic contact formation in silicene devices, enabling efficient electrode connections without direct contact between the electrode and silicene, thus avoiding the limitations of implantation methods.
2Ease of manufacture
If existing silicon process is used for graphene, then manufacturing is simplified, but graphene cannot utilize silicon process while silicene can
Solution Approach 1:
The patent makes the electrode structure universally applicable to both silicene and other 2D materials. By using electride materials or metals with low work functions in combination with intermediate layers, the same manufacturing approach can be applied to different 2D material systems, enhancing versatility while maintaining ease of manufacture through existing processes.
3Reliability
If silicene single or double layer structure is used, then high mobility and electronic device performance is achieved, but ohmic contact formation becomes difficult
Solution Approach 1:
The patent changes the work function parameter of the electrode material to match the electron affinity of silicene. This parameter matching eliminates the Schottky barrier and enables ohmic contact formation on the nanometer-scale thickness of silicene single or double layers, thus maintaining device performance while achieving precise contact formation.
Solution Approach 2:
The patent introduces an intermediate layer as a mediator between the silicene thin film and the electrode material. This intermediate layer enables ohmic contact formation without requiring high-precision doping or implantation processes, thus achieving reliable contact formation on the nanometer scale while preserving the high mobility characteristics of silicene.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of ohmic contacts on a nanometer level, simplifies the manufacturing process, and reduces the complexity of the implantation method, allowing for efficient electrode connections in silicene-based devices like Fin FETs, thereby improving device performance and reducing power consumption.
Implementation Method 1
an electrode material layer on the silicene material layer and includes a material having a work function lower than the electron affinity of silicene
Implementation Method 2
a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant
Data Source
AI summary
A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.