Silicide Channel Structure for Reliable 3D Memory Stacks
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Solution Overview
Problem
The increasing number of stacks in three-dimensional semiconductor memory devices decreases operation reliability, necessitating a solution to enhance integration while maintaining reliability.
Innovation Solution
A semiconductor device with a stack of alternately arranged insulating and conductive patterns, featuring a channel layer with a protruding first channel portion made of metal silicide and a second channel portion of polysilicon, surrounded by a conductive line, which includes different materials to improve reliability and reduce the need for high-temperature thermal processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacks of memory cells is increased to improve integration degree, then the area occupied by memory cells per unit area decreases, but operation reliability decreases
Solution Approach 1:
The channel layer is divided into two distinct portions: a first channel portion made of metal silicide and a second channel portion made of different material. This segmentation allows each portion to be optimized for specific functions, enabling higher stack counts while maintaining reliability through differentiated material properties in different regions.
Solution Approach 2:
Different materials are used for the first and second channel portions to provide local optimization. The metal silicide in the first channel portion provides specific electrical characteristics, while the second channel portion uses different materials to compensate for reliability issues arising from increased stack density, creating locally optimized regions within the same device.
2Manufacturing precision
If a high-temperature thermal process is used to form barrier layer on the channel, then the barrier layer forms properly, but the characteristics of the select transistor deteriorate
Solution Approach 1:
The invention changes the material parameter of the channel layer from conventional single-material structure to a composite structure with metal silicide in the first channel portion. This parameter change enables barrier layer formation at lower temperatures because metal silicide provides suitable surface properties for barrier layer deposition, thus avoiding the need for high-temperature processes that would damage select transistor characteristics.
Solution Approach 2:
The channel layer is formed as a composite structure with metal silicide and another material in different portions. This composite material approach allows the metal silicide region to serve as a suitable substrate for barrier layer formation at lower temperatures, while the overall channel structure maintains the necessary electrical characteristics for transistor operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances operation reliability by forming an ohmic contact between the channel portions without requiring additional high-temperature processes, maintaining uniform transistor characteristics and cell current generation.
Implementation Method 1
performing a thermal process to change the first protrusion into a first channel portion
Data Source
AI summary
The present technology provides a semiconductor device. The semiconductor device includes a stack including insulating patterns and conductive patterns stacked alternately with each other, a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack, and a conductive line surrounding the first channel portion, and the first channel portion includes metal silicide.