Silicide-Linked Conductive Plugs for Self-Aligned Semiconductor Filling

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Solution Overview

Problem

The complexity of semiconductor device manufacturing leads to issues such as gaps and misalignment between conductive plugs and dielectric layers, particularly in high aspect ratio opening structures, which can degrade device performance and reliability.

Innovation Solution

A semiconductor device structure with a silicide portion between conductive plugs, formed through a self-aligned process where the second conductive plug is created over the silicide portion before the surrounding dielectric layer, eliminating the need for etching and reducing gap formation and misalignment risks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional manufacturing processes are used for high aspect ratio opening structures, then conductive plugs can be formed, but gaps and misalignment between conductive plugs and dielectric layers occur, degrading device performance and reliability

Engineering Contradiction:

Improvedevice performance and reliabilityVSAvoidalignment between conductive plugs and dielectric layers

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The silicide portion is formed in advance before the second dielectric layer is deposited. This preliminary formation of the silicide portion serves as a precise alignment reference for subsequent conductive plug formation, eliminating misalignment issues that occur when dielectric layers are etched after plug formation. The silicide portion acts as a pre-positioned structure that guides the self-aligned formation of conductive plugs.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The silicide portion serves multiple functions automatically: it acts as both the structural base for conductive plugs and the alignment reference for their positioning. The self-aligned process uses the silicide portion's own geometry to define the conductive plug positions, eliminating the need for separate alignment markers or complex etching processes that cause misalignment.

Inventive Principle:

Principle #25Self-service

2Ease of manufacture

If conventional etching processes are used to form dielectric layers around conductive plugs, then openings can be created, but gap formation occurs between conductive plugs and dielectric layers

Engineering Contradiction:

Improveprocess feasibilityVSAvoidgap formation between conductive plugs and dielectric layers

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

Instead of forming dielectric layers first and then etching openings around conductive plugs, the invention inverts the sequence by first forming the silicide portion, then depositing dielectric layers conformally over it. This eliminates the need for subsequent etching operations that create gaps, as the dielectric layers are deposited to conform to the silicide portion's shape, naturally filling any potential gaps.

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The formation of the dielectric layer and the alignment reference structure are merged into a single conformal deposition process. The second dielectric layer is deposited conformally over the silicide portion, combining the functions of creating the dielectric structure and maintaining precise alignment in one step, eliminating gap formation that occurs with separate etching operations.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the performance, reliability, and yield of semiconductor devices by ensuring proper alignment and filling of conductive plugs, improving the manufacturing process efficiency.

Implementation Method 1

formed through a self-aligned process where the second conductive plug is created over the silicide portion before the surrounding dielectric layer

Methodology Applied

Scientific EffectSelf-aligned process:

Data Source

PatentUS12080598B2Method for preparing semiconductor device structure with silicide portion between conductive plugs

Publication Date: 2024.09.03 NAN YA TECH

AI summary

A method for preparing a semiconductor device structure includes forming a first dielectric layer over a semiconductor substrate; forming a first conductive plug in the first dielectric layer; forming a polysilicon layer covering the first dielectric layer and the first conductive plug; transforming a portion of the polysilicon layer into a silicide portion; forming a second conductive plug directly over the silicide portion; and forming a second dielectric layer surrounding the second conductive plug.