Silicide Contact Structure With Nitride Cap for Low-Resistance Transistors
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Solution Overview
Problem
The semiconductor industry faces challenges with reliability, high capacitance, and high resistance in integrated circuits due to the increasing density and reduced dimensions of components.
Innovation Solution
The implementation of a semiconductor device structure that includes a metal silicide layer and a metal silicon nitride layer formed on the source/drain regions, which reduces contact resistance and enhances device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the density of elements is increased and dimensions are reduced to improve integration density, then more components can be integrated into a given area, but contact resistance and capacitance increase
Solution Approach 1:
The patent transitions from a conventional planar contact structure to a three-dimensional protruding contact structure. The contact structure extends vertically from the semiconductor substrate surface, increasing the contact area in the vertical dimension while maintaining a small footprint in the horizontal plane. This dimensional change allows higher integration density without compromising contact quality.
Solution Approach 2:
The contact structure employs composite material construction with different sections having distinct properties. The protruding portion uses a first material optimized for contact properties, while the embedded portion uses a second material optimized for integration with the substrate. This composite approach optimizes both contact resistance and overall device performance.
2Manufacturing precision
If self-aligned contact process is used to avoid misalignment, then manufacturing precision is improved, but contact resistance and capacitance increase
Solution Approach 1:
The contact structure is segmented into distinct functional portions: a protruding contact portion extending from the substrate surface and an embedded contact portion within the substrate. This segmentation allows each portion to be optimized for its specific function - the protruding portion for low-resistance contact and the embedded portion for precise alignment and integration.
Solution Approach 2:
Different sections of the contact structure have different local properties optimized for their specific functions. The protruding portion has properties optimized for electrical contact, while the embedded portion has properties optimized for alignment and mechanical integration. This local quality differentiation resolves the contradiction between alignment precision and contact resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described structure effectively reduces contact resistance and improves the performance of semiconductor devices by increasing the contact area and preventing oxidation of the metal silicide layer.
Implementation Method 1
preventing oxidation of the metal silicide layer
Implementation Method 2
reduces contact resistance and enhances device performance
Data Source
AI summary
A semiconductor device is provided, including a substrate, a transistor structure, a metal silicide layer, and a metal silicon nitride layer. The transistor structure is formed on the substrate. The transistor structure includes a source region, a drain region and a gate structure. The gate structure is located between the source region and the drain region. The metal silicide layer is formed on the top surface of the source region and the top surface of the drain region, and the metal silicon nitride layer is formed on the surface of the metal silicide layer.