Silicide Contact for Semiconductor Polymers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Traditional CMOS technology faces limitations in scaling down integrated circuits due to physical constraints and increasing production costs, and the use of traditional semiconductor materials poses challenges in integrating semiconductor polymers, particularly in achieving stable and efficient electrical contacts and characterizing electrical properties.
Innovation Solution
The use of a silicide region as a contact surface with semiconductor polymeric material, formed on a polysilicon region, which provides stability and allows modulation of the work function through doping, enabling efficient electrical characterization and reducing interdiffusion and oxidation issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metallic materials (aluminium, gold, indium) are used for contacting polymeric material, then electrical characteristics (work function, charge injection) are optimized, but stability in atmosphere during deposition is poor and interdiffusion occurs
Solution Approach 1:
The patent introduces a silicide layer as an intermediary between the metallic contact material and the polymeric semiconductor layer. This silicide intermediary prevents direct contact between the metal and polymer, thereby preventing interdiffusion while maintaining electrical functionality. The silicide layer acts as a barrier that stabilizes the contact in atmospheric conditions during deposition processes.
2Reliability
If gold is used for hole injection, then electrical characteristics are optimized, but production cost increases due to high material cost
Solution Approach 1:
The patent replaces expensive noble metals like gold with cheaper alternative materials for the contact layer. The silicide-based contact structure provides sufficient electrical functionality at a fraction of the cost of gold, making the device economically viable for mass production while maintaining the necessary charge injection properties.
3Productivity
If traditional CMOS technology is used for scaling down, then integration capacity increases, but physical limits are reached and production costs increase exponentially
Solution Approach 1:
The patent transitions from inorganic semiconductor materials to organic polymeric materials, fundamentally changing the material parameter space. This material substitution enables continued scaling and integration capacity increases without hitting the physical limits that constrain traditional silicon-based CMOS technology, while also reducing production costs through alternative fabrication approaches.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for stable and efficient electrical contacts, reduced production costs, and flexible characterization of polymeric materials, overcoming limitations of traditional materials and processes.
Implementation Method 1
selected on the basis of their electrical characteristics (in particular, the work function and hence the property of charge injection in the polymeric material)
Implementation Method 2
stability in atmosphere during the process of deposition of the polymeric material
Data Source
AI summary
Described herein is an electronic device provided with an electrode and a region of polymeric material set in contact with the electrode. The electrode has a polysilicon region and a silicide region, which coats the polysilicon region and is arranged, as interface, between the polysilicon region and the region of polymeric material. The polysilicon region is doped with a doping level that is a function of a desired work function at the interface with the region of polymeric material. The electronic device is, for example, a testing device for characterizing the properties of the polymeric material.