Silicide-Linked Conductive Plug Structure for Alignment Accuracy
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Solution Overview
Problem
The manufacturing and integration of semiconductor devices are complex and prone to deficiencies, such as gaps and misalignment between conductive plugs and dielectric layers, which can degrade device performance.
Innovation Solution
A semiconductor device structure is designed with a silicide portion between conductive plugs, where the second conductive plug is formed over the silicide portion by a self-aligned process before the surrounding dielectric layer is formed, eliminating the need for etching and reducing the risk of misalignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing processes are used to form conductive plugs and dielectric layers, then the device can be manufactured, but gaps and misalignment occur between conductive plugs and dielectric layers degrading device performance
Solution Approach 1:
The silicide portion is formed in advance within the polysilicon layer before the dielectric layer is deposited. This preliminary formation of the silicide portion serves as a pre-positioned alignment reference that guides subsequent processing steps, ensuring that conductive plugs are correctly positioned relative to the dielectric layer without requiring complex alignment procedures.
Solution Approach 2:
The silicide portion automatically forms through a self-aligned process where the polysilicon layer and silicide formation occur in conjunction with the conductive plug positioning. The process utilizes the existing structure to define the silicide location, eliminating the need for separate alignment operations and reducing misalignment risks between conductive plugs and dielectric layers.
2Ease of manufacture
If etching processes are used to form openings for conductive plugs, then conductive plugs can be formed, but misalignment and gap formation occur
Solution Approach 1:
The silicide portion acts as an intermediary element between the conductive plug and the underlying structure. It is formed within the polysilicon layer and provides a stable, pre-defined interface that facilitates accurate conductive plug formation without requiring aggressive etching processes that cause misalignment and gap formation.
Solution Approach 2:
The invention replaces traditional mechanical etching processes with a self-aligned formation approach. Instead of using etching to define the conductive plug position, the silicide portion is formed in advance within the polysilicon layer, and the conductive plug is subsequently formed over it, eliminating the misalignment issues associated with etching-based positioning.
3Adaptability or versatility
If complex manufacturing operations are implemented for integration, then greater functionality is achieved, but the process becomes increasingly complicated and prone to deficiencies
Solution Approach 1:
The silicide formation process is merged with the polysilicon layer processing steps. The silicide portion is formed within the polysilicon layer in a combined process sequence, reducing the total number of separate manufacturing operations required while maintaining the ability to achieve greater device functionality through integrated structure formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the performance, reliability, and yield of semiconductor devices by reducing gap formation and misalignment between conductive plugs and dielectric layers, thereby enhancing the overall manufacturing process.
Implementation Method 1
the second conductive plug is formed over the silicide portion by a self-aligned process before the surrounding dielectric layer is formed
Data Source
AI summary
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first conductive plug disposed in the first dielectric layer, and a second conductive plug disposed in the second dielectric layer and directly over the first conductive plug. The semiconductor device structure further includes a silicide portion disposed between the first conductive plug and the second conductive plug.