Single Photon Detection Device Silicide Layer Fill Factor
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Solution Overview
Problem
Existing photodetection devices face challenges in achieving high light detection efficiency, wide light detection wavelength range, improved fill factor, and enhanced efficiency.
Innovation Solution
A single photon detection device is designed with a first silicide layer, a first well, a high-concentration doping region, a contact region, and a depletion region, along with a second silicide layer and additional guard rings, to enhance electrical and optical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional photodetection device structures are used, then manufacturing is simpler, but light detection efficiency is lower
Solution Approach 1:
The device structure is segmented into multiple functional regions including a first silicide layer, a first well, a high-concentration doping region, a contact region, and a depletion region. This segmentation allows each region to perform its specific function optimally, improving light detection efficiency while maintaining manageable complexity through modular design
Solution Approach 2:
Different regions of the device are assigned different doping concentrations and material compositions tailored to their specific functions. The high-concentration doping region provides high carrier density for efficient collection, while the depletion region provides the electric field for charge separation. This local optimization of properties improves overall detection efficiency
2Reliability
If conventional device structures are used, then device complexity is lower, but fill factor is reduced
Solution Approach 1:
The device utilizes vertical stacking of multiple layers (first silicide layer, first well, high-concentration doping region, contact region, depletion region) to achieve high fill factor. By transitioning from a planar to a three-dimensional stacked architecture, the active detection area is maximized without increasing the device footprint, thereby improving fill factor while accepting increased structural complexity
3Adaptability or versatility
If conventional photodetection structures are used, then manufacturing is easier, but wavelength detection range is limited
Solution Approach 1:
The device employs composite material structure combining silicide layers with semiconductor regions of specific bandgap energies. The first silicide layer and underlying semiconductor layers are selected to have appropriate bandgap energies for detecting specific wavelength ranges. This composite material approach enables extended wavelength detection range while maintaining compatibility with standard semiconductor manufacturing processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves improved light detection efficiency, expanded wavelength range, increased fill factor, and enhanced overall efficiency due to the optimized structural and electrical design.
Implementation Method 1
When an incident photon with energy greater than the semiconductor's bandgap reaches the photodiode, an electron-hole pair (EHP) is generated
Implementation Method 2
The high electric field rapidly accelerates the photo-generated electron towards the (+) side, and impact ionization by these accelerated electrons successively generates additional electron-hole pairs, which are then all accelerated towards the anode
Data Source
AI summary
A single photon detection device comprises a first silicide layer, a first well provided on the first silicide layer and having a first conductivity type, a high-concentration doping region provided between the first silicide layer and the first well, having a second conductivity type different from the first conductivity type, and contacting the first silicide layer, a contact region spaced apart from the high-concentration doping region along a direction parallel to a bottom surface of the high-concentration doping region and having the first conductivity type, and a depletion region formed in a region adjacent to a top surface of the high-concentration doping region.