Silicide-Sandwiched Source/Drain Region for Thermal Sensing
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Solution Overview
Problem
Existing semiconductor devices face challenges in effectively and efficiently heating or sensing temperature due to thermistors being thermally distant from the active transistors, leading to inefficiencies in heating or temperature sensing accuracy.
Innovation Solution
Incorporating a silicide-sandwiched source/drain (S/D) region that is thermally proximal to the active transistor, allowing it to function as both a heater and a temperature sensor, enhancing thermal proximity and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a traditional thermistor is used for temperature sensing or heating, then the device structure is simple, but the thermistor is thermally distant from the active transistor resulting in poor heating efficiency and inaccurate temperature sensing
Solution Approach 1:
The patent merges the temperature sensing/heating function with the source/drain structure by forming a silicide layer directly on the doped portion of the active region. This integration eliminates the need for separate thermistors and their associated interconnect structures, achieving both improved thermal proximity to the transistor channel and reduced device complexity
Solution Approach 2:
The silicide layer acts as an intermediary element that provides both electrical contact and thermal coupling between the doped active region and the external measurement/heating circuitry. This intermediary structure enables efficient heat transfer and accurate temperature sensing while maintaining electrical functionality
2Ease of manufacture
If the thermistor is placed far from the active transistor, then the device layout is easier, but the heating efficiency and temperature sensing accuracy deteriorate
Solution Approach 1:
The temperature sensing/heating function is merged into the source/drain structure itself, with the silicide layer formed directly on the doped active region. This eliminates the need for distant thermistor placement while maintaining ease of manufacture through standard semiconductor fabrication processes
Solution Approach 2:
The silicide layer is selectively formed only on the doped portion of the active region, creating local thermal and electrical properties where needed. This localized approach improves heating efficiency and sensing accuracy without complicating the overall device layout or manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicide-sandwiched S/D region effectively and efficiently heats or senses temperature, improving the performance of active transistors by being thermally proximal, thus overcoming the limitations of traditional thermistor placement.
Implementation Method 1
Incorporating a silicide-sandwiched source/drain (S/D) region that is thermally proximal to the active transistor, allowing it to function as both a heater and a temperature sensor
Data Source
AI summary
A semiconductor device includes: a first arrangement including first and second silicide layers correspondingly electrically coupled to opposing first and second sides of a doped first portion of an active region; and a second arrangement including a third silicide layer electrically coupled to a first or second side of a doped second portion of the active region.