Silicided Polysilicon Gate and Sensor Layout for Fast Power Switching
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Solution Overview
Problem
Conventional semiconductor switching devices face challenges in reducing gate electrode resistance to enhance switching speed and frequency performance while maintaining efficient temperature sensing capabilities, particularly in high power applications.
Innovation Solution
Incorporation of a silicided polysilicon gate electrode and temperature sensor within semiconductor devices, which are integrated to reduce gate resistance and facilitate real-time temperature monitoring, thereby preventing thermal damage and improving switching control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If polysilicon gate electrode resistance is reduced through silicidation, then switching speed improves, but temperature monitoring capability is lost
Solution Approach 1:
The polysilicon gate electrode is segmented into two functional regions: a silicided region for low resistance and fast switching, and a non-silicided region for temperature sensing. This segmentation allows each region to perform its specialized function without interfering with the other, resolving the contradiction between switching speed and temperature monitoring capability.
Solution Approach 2:
The polysilicon gate electrode structure is designed to serve multiple functions: the silicided portion provides low resistance for fast switching, while the adjacent non-silicided portion provides temperature sensing capability. This multi-functionality approach allows a single structure to address both the speed improvement and temperature monitoring requirements simultaneously.
2Loss of energy
If heavily doped polysilicon is used for gate electrode, then on-state resistance decreases, but thermal management capability deteriorates
Solution Approach 1:
A temperature sensing region is integrated into the polysilicon gate structure to provide real-time temperature feedback. This feedback mechanism enables the system to monitor thermal conditions and implement thermal management strategies, preventing thermal runaway while maintaining the low on-state resistance achieved through heavy doping.
Solution Approach 2:
The invention changes the physical and chemical parameters of the polysilicon gate by creating regions with different doping concentrations and silicidation states. The heavily doped silicided region minimizes on-state resistance, while the lightly doped non-silicided region provides temperature sensing capability for thermal management.
3Temperature
If additional temperature sensor is integrated into polysilicon gate, then thermal management improves, but device complexity increases
Solution Approach 1:
The temperature sensing function is merged with the existing polysilicon gate electrode structure by designating a portion of it for sensing purposes. This integration eliminates the need for separate temperature sensor structures, reducing overall device complexity while maintaining effective thermal management capability.
Solution Approach 2:
The polysilicon gate electrode is designed as a multi-functional structure that simultaneously serves as both the gate control electrode and the temperature sensor. This universal design approach allows the same structure to perform multiple functions, thereby improving thermal management without increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of silicided polysilicon gate electrodes and temperature sensors enhances switching speed and frequency performance by reducing resistance and enabling accurate temperature measurements, ensuring reliable operation under high thermal stress.
Implementation Method 1
a silicided polysilicon temperature sensor, which may extend adjacent the first surface... its resistivity monotonically increases in a range from 25° C. to 125° C.
Data Source
AI summary
A power device includes a semiconductor substrate having first and second current carrying terminals on respective first and second opposing surfaces thereof. A silicided polysilicon temperature sensor and silicided polysilicon gate electrode are provided on the first surface. A source region of first conductivity type and a shielding region of second conductivity type are provided in the semiconductor substrate. The shielding region forms a P-N rectifying junction with the source region, and extends between the silicided polysilicon temperature sensor and the second current carrying terminal. A field oxide insulating region is provided, which extends between the shielding region and the silicided polysilicon temperature sensor.