Silicided Polysilicon HEMT Layout for Integrated E-Fuse Programming
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Solution Overview
Problem
The fabrication of high electron mobility transistors (HEMT) and electronic fuses on separate dies or wafers incurs additional manufacturing costs and results in larger device sizes due to the need for separate components, which is inefficient for integrated circuit chips.
Innovation Solution
A semiconductor device design that includes a polysilicon layer with a silicide layer, where the polysilicon layer is positioned laterally adjacent to the gate in a HEMT device, allowing for the integration of the polysilicon layer as an electronic fuse or resistor, reducing the need for separate components and minimizing device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If HEMT and electronic fuse are fabricated on separate dies or wafers, then each component can be optimized independently, but manufacturing costs increase and device size increases
Solution Approach 1:
The patent combines the HEMT device and electronic fuse into a single integrated structure on the same semiconductor substrate. The polysilicon layer serves dual purposes: as part of the HEMT device structure and as the fuse element, eliminating the need for separate fabrication processes and reducing overall device area while maintaining component optimization.
Solution Approach 2:
The polysilicon layer is designed to perform multiple functions: it serves as a structural component of the HEMT device and simultaneously functions as the electronic fuse element. This multi-functionality reduces the total number of components needed and simplifies the manufacturing process.
2Reliability
If HEMT and electronic fuse are fabricated on separate dies or wafers, then each component can be optimized independently, but device size and area increase
Solution Approach 1:
The patent combines the HEMT device and electronic fuse into a single integrated structure on the same semiconductor substrate. The polysilicon layer serves dual purposes: as part of the HEMT device structure and as the fuse element, eliminating the need for separate fabrication processes and reducing overall device area while maintaining component optimization.
Solution Approach 2:
The electronic fuse structure is nested within the same substrate as the HEMT device, with the polysilicon layer serving both functions. This nesting approach allows one component to be embedded within or alongside the other, maximizing space utilization and minimizing total device area.
3Adaptability or versatility
If separate components are used for HEMT and electronic fuse, then component functionality is independent, but manufacturing complexity increases
Solution Approach 1:
The patent combines the HEMT device and electronic fuse into a single integrated structure on the same semiconductor substrate. The polysilicon layer serves dual purposes: as part of the HEMT device structure and as the fuse element, eliminating the need for separate fabrication processes and reducing overall device area while maintaining component optimization.
Solution Approach 2:
The polysilicon layer is designed to perform multiple functions: it serves as a structural component of the HEMT device and simultaneously functions as the electronic fuse element. This multi-functionality reduces the total number of components needed and simplifies the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces manufacturing costs and device size by integrating the polysilicon layer with a silicide layer within the HEMT device, enabling efficient programming and operation of electronic fuses or resistors without the need for separate components, thus enhancing the performance and efficiency of integrated circuit chips.
Implementation Method 1
a silicide layer on the polysilicon layer
Implementation Method 2
the polysilicon layer includes heavily doped regions and lightly doped regions
Implementation Method 3
An electronic fuse may operate based on electromigration, where current crowding takes place around a fixed location, thus initiating the electromigration which results in further current crowding and material migration in the direction of the electron movement along the fuse element
Data Source
AI summary
The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.