Silicided Polysilicon HEMT Structure With Integrated E-Fuse
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The fabrication of high electron mobility transistors (HEMT) and electronic fuses on separate dies or wafers incurs additional manufacturing costs and increases chip size due to the need for separate fabrication processes.
Innovation Solution
A semiconductor device design that includes a polysilicon layer with a silicide layer, positioned laterally adjacent to the gate, allowing for the integration of HEMT and electronic fuse functionality on the same substrate, reducing manufacturing costs and chip size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If HEMT and electronic fuse are fabricated on separate dies or wafers, then each component can be optimized independently, but manufacturing costs increase and device size increases
Solution Approach 1:
The patent combines the HEMT device and electronic fuse into a single integrated structure on the same die. The polysilicon layer serves dual purposes: as part of the HEMT device structure and as the fuse element. This merging eliminates the need for separate fabrication processes and reduces overall device size while maintaining the reliability benefits of optimized component design.
Solution Approach 2:
The polysilicon layer performs multiple functions within the integrated device: it acts as a structural component of the HEMT, provides the fuse element functionality, and enables both high electron mobility transistor operation and electronic fuse protection in a single structure. This multi-functionality resolves the contradiction by allowing independent optimization of both components while reducing manufacturing complexity.
2Reliability
If HEMT and electronic fuse are fabricated on separate dies or wafers, then each component can be optimized independently, but device size and area increase
Solution Approach 1:
The patent merges the HEMT and electronic fuse into a single integrated device structure, where the polysilicon layer serves both as part of the transistor structure and as the fuse element. This combination significantly reduces the total device area compared to separate implementations, as both functions share the same physical space and fabrication footprint.
Solution Approach 2:
The electronic fuse functionality is nested within the HEMT device structure by using the polysilicon layer that already forms part of the transistor. The fuse element is effectively embedded within the existing device architecture, allowing both functions to coexist in a compact configuration that minimizes overall device size.
3Ease of manufacture
If polysilicon layer is positioned laterally adjacent to the gate, then integration of HEMT and electronic fuse is enabled, but manufacturing precision requirements increase
Solution Approach 1:
The polysilicon layer is formed and positioned laterally adjacent to the gate structure during the initial fabrication stages, before final device assembly. This preliminary positioning establishes the fuse element location early in the process, allowing subsequent steps to build upon this established geometry and reducing the precision requirements for later alignment-critical steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the integration of HEMT and electronic fuse components on a single substrate, reducing manufacturing costs and chip size while maintaining high-frequency and high-voltage capabilities.
Implementation Method 1
a silicide layer on the polysilicon layer
Implementation Method 2
the polysilicon layer includes heavily doped regions and lightly doped regions
Implementation Method 3
High electron mobility transistors (HEMT) have become increasingly desirable due to their ability to switch at high frequency, carry large currents, and support high voltages
Data Source
AI summary
The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.