Silicided MOS Capacitor Ignition for Low-Energy Miniaturization
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Solution Overview
Problem
Existing ignition systems for electro-thermally initiated explosive devices are large, expensive, and require high energy levels, making them inefficient and difficult to miniaturize, while lacking safeguards against undesirable ignition.
Innovation Solution
A semiconductor explosion initiator device manufactured using conventional MOS techniques, which converts low electrical energy into chemical energy to initiate explosions quickly and reliably, using a voltage source to break down the oxide layer and produce a plasma that ignites explosive materials, with features like low firing energy and fast function times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional ignition systems are used for electro-thermally initiated explosive devices, then the devices can be ignited, but the ignition systems become large, expensive, and require high energy levels
Solution Approach 1:
The patent changes the physical and chemical parameters of the ignition system by using a MOS capacitor structure with specific oxide layer thickness (50-200 nm) and silicide material properties. This allows the system to achieve ignition at lower energy levels (microjoule range) compared to conventional systems while reducing the overall device volume through miniaturization of the semiconductor structure.
Solution Approach 2:
The patent replaces conventional mechanical or thermal ignition systems with an electro-thermal field-based MOS capacitor ignition system. The electric field generated across the oxide layer directly heats the silicide material to initiate explosion, eliminating the need for larger mechanical ignition components and reducing system complexity and size.
2Speed
If electro-shock initiated devices are used, then fast and repeatable function times are achieved, but very high energy levels are required leading to larger and more expensive electrical firing systems
Solution Approach 1:
The patent applies local quality by concentrating the electric field energy in a highly localized region within the MOS capacitor structure, specifically at the oxide-silicide interface. This localized energy concentration achieves rapid ignition (fast function time) without requiring high overall power levels across the entire system, as the energy is focused precisely where needed to initiate the explosive reaction.
Solution Approach 2:
The patent transitions from conventional bulk ignition methods to a field-effect-based ignition mechanism operating at the nanoscale dimension. By utilizing the electric field across the thin oxide layer (50-200 nm), the system achieves rapid energy transfer and ignition in a dimensional regime that enables faster response times with lower power requirements compared to traditional macro-scale ignition systems.
3Volume of moving object
If ignition systems are miniaturized, then smaller features are achieved, but manufacturing complexity increases and safeguards against undesirable ignition become more difficult to implement
Solution Approach 1:
The patent achieves multi-functionality by using the MOS capacitor structure for both ignition generation and inherent safety control. The same semiconductor fabrication processes that create the miniaturized ignition device also establish the oxide layer thickness and material properties that determine the ignition threshold, eliminating the need for separate safety mechanisms and simplifying manufacturing while maintaining small size.
Solution Approach 2:
The MOS capacitor ignition system is self-regulating through its physical structure. The oxide layer acts as both the dielectric for charge storage and the barrier that prevents inadvertent ignition. Only when the electric field exceeds the breakdown threshold does ignition occur, providing built-in safety without requiring additional manufacturing steps or complex control systems.
4Use of energy by moving object
If low firing energy is achieved, then energy efficiency is improved, but reliability against inadvertent initiation must be maintained
Solution Approach 1:
The oxide layer in the MOS capacitor structure serves as a pre-established protective barrier that prevents inadvertent ignition. This layer is formed during standard semiconductor fabrication and provides a built-in safety mechanism that requires a specific threshold electric field to break down. The structure is designed beforehand to withstand normal operating conditions while enabling controlled ignition when the threshold is intentionally exceeded.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor explosion initiator device achieves efficient and rapid ignition with low energy consumption, is compact, reliable, and can be easily manufactured in large quantities, while providing safeguards against unintended ignition.
Implementation Method 1
A voltage is applied across the oxide layer of the MOS capacitor and the voltage is sufficient to break down the oxide
Implementation Method 2
a plasma is produced which initiates the explosion of explosive materials
Implementation Method 3
The electro-explosive semiconductor device is efficient at converting electrical energy to chemical energy that triggers an explosion
Data Source
AI summary
An explosive device using a semiconductor explosion initiator device provides an MOS capacitor formed on a semiconductor substrate and including a silicide layer formed over a doped silicon layer formed over an oxide layer. The oxide layer is formed on an N-well formed in a semiconductor substrate. A voltage source applies a voltage which may be a pulsed voltage, across the MOS capacitor sufficient to cause the avalanche breakdown of the oxide layer and the diffusion of metal from the silicide layer into the doped silicon of the N-well formed in the substrate. The chemical reaction between the metal and the doped silicon causes the generation of a plasma which ignites a pyrotechnic material or ignites or detonates other explosive material in contact with the semiconductor explosion initiator device.