High-Purity Silicon Additive Manufacturing for Crack-Free Complex Components

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Solution Overview

Problem

Current methods struggle to manufacture high-purity silicon components with complex shapes for semiconductor manufacturing equipment without causing cracks or defects.

Innovation Solution

An additive manufacturing method is employed to produce high-purity silicon components by heating a base plate in a vacuum processing container, depositing silicon powder, forming a molten silicon layer with an energy beam, and solidifying it, with repeated cycles to achieve the desired shape.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Shape

If conventional manufacturing methods are used to produce high-purity silicon components, then manufacturing simplicity is maintained, but the ability to produce complex shapes without cracks or defects deteriorates

Engineering Contradiction:
Improvecomplexity of component shapeVSAvoidpresence of cracks and defects
Core Design Contradiction:
ShapeVSManufacturing precision

Solution Approach 1:

The manufacturing process is divided into discrete additive layers, where silicon powder is deposited and sintered in sequential steps. This segmentation allows complex geometries to be built incrementally without the stress concentrations and defects associated with conventional subtractive or casting methods, enabling crack-free manufacturing of intricate shapes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent utilizes controlled changes in temperature, pressure, and atmosphere parameters during the additive manufacturing process. By precisely controlling these parameters during powder deposition and sintering cycles, the process achieves high-density consolidation without defects, enabling complex shapes to be manufactured with high precision and without cracks.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If high-purity silicon powder is deposited and sintered in a vacuum environment, then manufacturing precision and purity are improved, but the complexity of the manufacturing process increases

Engineering Contradiction:
Improvepurity of silicon componentVSAvoidcomplexity of vacuum processing system
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The vacuum processing container serves multiple functions: it provides the vacuum environment for pure powder deposition, acts as the heating zone for sintering, and functions as the containment chamber for the entire additive manufacturing process. This multi-functionality reduces the need for separate specialized equipment, thereby limiting the increase in device complexity while achieving high purity manufacturing.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The vacuum environment is maintained continuously throughout the entire additive manufacturing process, from powder deposition through heating and sintering cycles. This continuous vacuum condition eliminates the need for repeated vacuum pumping cycles or atmosphere changes, reducing operational complexity while ensuring high purity of the final silicon component.

Inventive Principle:
Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the precise and defect-free manufacturing of high-purity silicon components with complex shapes, improving the capabilities of semiconductor manufacturing equipment.

Implementation Method 1

forming a molten silicon layer by scanning an energy beam on the base plate

Methodology Applied
Scientific EffectEnergy beam heating: Electron Beam

Implementation Method 2

forming a solidified silicon layer by cooling the molten silicon layer

Methodology Applied
Scientific EffectCooling and solidification: Freezing

Implementation Method 3

turning an interior of a vacuum processing container into a high vacuum state

Methodology Applied
Scientific EffectVacuum: Vacuum

Data Source

PatentUS20250178234A1Method of additively manufacturing high-purity silicon, method of additively manufacturing semiconductor manufacturing equipment component, semiconductor manufacturing equipment component, and method of forming semiconductor manufacturing equipment component
Publication Date: 2025.06.05 TOKYO ELECTRON LTD
  • US20250178234A1 patent drawing
  • US20250178234A1 patent drawing
  • US20250178234A1 patent drawing

AI summary

A method of additively manufacturing a high-purity silicon includes: turning an interior of a vacuum processing container into a high vacuum state; heating a base plate disposed in the interior of the vacuum processing container; depositing silicon powder on the base plate; forming a molten silicon layer by scanning an energy beam on the base plate; and forming a solidified silicon layer by cooling the molten silicon layer, wherein a cycle including the depositing the silicon powder, the forming the molten silicon layer, and the forming the solidified silicon layer is repeatedly executed.