Silicon-Alkoxide Precursors for Void-Free CVD Films
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Solution Overview
Problem
Conventional flowable chemical vapor deposition methods for silicon-containing films, such as those using trisilylamine, result in films with high wet etch rates and stability issues, often leading to void formation due to excessive carbon content, which is difficult to remove without causing defects.
Innovation Solution
The development of new precursor compounds with tert-butyl or tert-butoxy groups that can be easily removed by plasma, thermal, or UV treatment, allowing for the deposition of silicon-containing films with improved gap-fill properties and reduced void formation, using methods that involve specific temperature and pressure conditions in a reactor with oxygen or nitrogen sources.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional precursors like trisilylamine are used for flowable CVD, then silicon-containing films can be deposited, but the films exhibit high wet etch rates and stability issues leading to void formation
Solution Approach 1:
The patent changes the chemical composition parameters of the precursor by incorporating silicon alkoxide groups (Si-OR) instead of conventional Si-H or Si-C bonds. This parameter change in bond type fundamentally alters the film properties, reducing wet etch rates and improving stability while preventing void formation during deposition.
Solution Approach 2:
The invention uses composite precursor molecules containing both silicon alkoxide groups and organic substituents (R groups). This composite structure allows the film to exhibit both the stability of Si-O bonds and the desired physical properties from the organic components, resolving the contradiction between film stability and void formation.
2Adaptability or versatility
If carbon-containing precursors are used to functionalize the network, then desired chemical and physical properties are achieved, but excessive carbon content causes void formation that is difficult to remove
Solution Approach 1:
The patent changes the carbon content parameter by using silicon alkoxide precursors with controlled organic substituents. The Si-OR bonds provide a different chemical basis compared to Si-C bonds, allowing functionalization with lower carbon content that achieves desired properties without excessive carbon that would cause voids.
Solution Approach 2:
The invention applies local quality by strategically placing organic functional groups (R groups) on specific silicon atoms within the network. This localized functionalization provides desired chemical and physical properties in specific regions while maintaining overall low carbon content to prevent void formation throughout the film.
3Ease of manufacture
If conventional alkoxysilane compounds are used as precursors, then films can be deposited by hydrolysis and condensation, but the films have high wet etch rates
Solution Approach 1:
The patent changes the chemical parameter of the precursor by using specific silicon alkoxide structures with particular R groups. This parameter change maintains the ease of hydrolysis and condensation for deposition while fundamentally improving etch resistance by creating a more stable film network structure.
Solution Approach 2:
The invention employs composite silicon alkoxide precursors that combine the reactive Si-OR groups (enabling easy deposition) with stabilizing organic substituents. This composite structure allows the film to be easily manufactured through standard processes while simultaneously achieving high etch resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new method produces silicon-containing films with reduced voids and defects, achieving excellent gap-fill capabilities and improved stability, as demonstrated by SEM images, with enhanced etch resistance and reduced carbon content.
Implementation Method 1
the water within the mixture can react with the alkoxysilanes to hydrolyze the alkoxide and/or aryloxide groups and generate silanol species
Implementation Method 2
which further condense with other hydrolyzed molecules and form an oligomeric or network structure
Implementation Method 3
placing a substrate having a surface feature into a reactor which are maintained at a temperature ranging from −20° C. to about 400° C.
Implementation Method 4
treating the substrate with an oxygen source at one or more temperatures ranging from about 100° C. to about 1000° C.
Data Source
AI summary
Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.