Silicon-Aluminum-Oxide Protection Layer for Semiconductor Stability
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Solution Overview
Problem
In the manufacturing of thin film transistors, the oxide channel layer often contacts reducible elements during the formation of protection layers, leading to changes in the oxygen-to-metal ratio, causing electrical instability and shifting threshold voltages, which affects the reliability and stability of the semiconductor device.
Innovation Solution
A semiconductor device is manufactured with a silicon-aluminum-oxide layer as a protection layer, using physical vapor deposition to cover the channel, source, and drain, and the gate insulation layer, with a silicon-to-aluminum content ratio ranging from 10:90 to 90:10, avoiding the use of reducible elements and ensuring uniformity and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protection layer is formed using conventional methods with reducible elements, then the protection layer provides structural coverage, but the oxide channel layer contacts reducible elements causing oxygen-to-metal ratio changes and electrical instability
Solution Approach 1:
An aluminum oxide layer is introduced as an intermediary barrier between the oxide channel layer and the protection layer. This aluminum oxide layer prevents direct contact between the oxide channel layer and reducible elements in the protection layer, thereby maintaining the oxygen-to-metal ratio and electrical stability of the thin film transistor
Solution Approach 2:
The protection structure uses a composite material system consisting of multiple layers including aluminum oxide and silicon oxide in specific combinations. This composite structure provides both protection functionality and chemical stability, preventing harmful interactions while maintaining device performance
2Ease of manufacture
If the oxide channel layer is exposed to reducible elements during protection layer formation, then the protection layer can be manufactured, but the threshold voltage shifts leftward and electrical stability deteriorates
Solution Approach 1:
The aluminum oxide layer is formed in advance before the final protection layer is deposited. This preliminary action creates a stable barrier that prevents subsequent reducible elements from affecting the oxide channel layer, ensuring threshold voltage stability throughout the manufacturing process
Solution Approach 2:
The aluminum oxide layer serves as a mediator that allows the protection layer to be manufactured without exposing the oxide channel layer to harmful reducible elements, thus maintaining both manufacturability and electrical precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon-aluminum-oxide layer effectively protects the channel layer from variations, maintains electrical stability, and prevents undercut issues during etching, enhancing the reliability and performance of the semiconductor device by maintaining consistent threshold voltage over time.
Implementation Method 1
a silicon-aluminum-oxide layer is formed on the substrate, covering the source, the drain, and the channel layer
Data Source
AI summary
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a channel layer, a gate insulation layer, a source, a drain and a silicon-aluminum-oxide layer. The gate is disposed on a substrate. The channel layer is disposed on the substrate. The channel layer overlaps the gate. The gate insulation layer is disposed between the gate and the channel layer. The source and the drain are disposed on two sides of the channel layer. The silicon-aluminum-oxide layer is disposed on the substrate and covers the source, the drain and the channel layer.